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Directly crystallized deposited silicon at low temperature is shown to be the right material when bendable system including treatment electronics and sensing functions is needed. This is true particularly when process reproducibility, electrical and mechanical reliability of the devices are the most important parameters implying the success of the technology. Indeed, these parameters are the main...
We present the study of the dynamic response of silicon-based thin-film transistors under the voltage change, focusing on the time necessary to form the channel. Every detail of the current response-time curve is discussed by analyzing the intrinsic capacitances of thin-film transistors in on and off state and in linear and saturation mode. The method used in this work allows the visualization of...
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