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In this work, we characterize the scalability of ZnO TFTs for RF transistor and DC switching applications through variations in channel length, total device periphery, and parasitic gate overlap capacitance. For simple device test structures that have not been optimized for either RF transistors or DC switches, we show drain current density (IDS) and Ron scalability for channel lengths (LC) from 10...
Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density...
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