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We demonstrated exfoliated-graphene/transition metal dichalcogenide (TMD)/metal vertical field-effect transistor (vFET). The van der Waals junction between graphene and TMD exhibit Schottky barrier. Owing to the low density of state of graphene, the position of graphene's Fermi level can be modulated by the external electric field, thus enable us electric field modulation of Schottky barrier height...
We fabricated van der Waals (vdW) junctions of two-dimensional (2D) crystals using mechanical exfoliation and transfer technique of atomic layers. By connecting cleaved flakes of Fe0.25TaS2, van der Waals magnet tunnel junction was constructed, exhibiting tunneling magnetoresistance effect. In addition, large current modulation with ON-OFF current ratio exceeding 105 and ON current density of 104...
We demonstrated exfoliated-graphene/transition metal dichalcogenide (TMD)/metal vertical field-effect transistor (vFET). The van der Waals junction between graphene and TMD exhibit Schottky barrier. Owing to the low density of state of graphene, the position of graphene's Fermi level can be modulated by the external electric field, thus enable us electric field modulation of Schottky barrier height...
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