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The growth of GaP and AlAs/GaAs/GaP heterostructure nanowires on Si using Au colloids as catalysts was investigated. For GaP nanowire growth, we found an epitaxial relationship between the GaP nanowires and Si substrate. The AlAs/GaAs/GaP heterostructure nanowires were found to grow vertically on Si. Structural analysis indicates that the hetero-interfaces are within several atomic layers in thickness...
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