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InP photonic integration technology has been adapted for operation down to 2 microns enabling the development of integrated laser systems for specific applications. Strained quantum well and quantum dot gain media have been used to demonstrate tunable lasers for coherence tomography and gas detection.
Progress on the development of a long wavelength (∼2 µm) generic monolithic photonic integration technology on indium phosphide substrate and a novel concept of a tunable laser realized as a photonic integrated circuit using such technology are presented. Insights into the development of active and passive waveguide structures which are used to define a limited set of on-chip functionalities in the...
In this letter, the fabrication and the characterization of angled and straight etched facets in InP-based technology are reported. In addition, we report on etched facets combined with coupler mirrors for vertical outcoupling, realized with a wet-etching process.
A tunable laser operating from 2015 – 2040 nm realized as a monolithic InP photonic integrated circuit is presented. The laser uses an intracavity tuning mechanism based on parallel asymmetric Mach-Zehnder interferometers with electro-refractive modulators. The device is intended for a single line gas spectroscopy and was designed and fabricated using a generic integration technology platform.
Modal gain characterization of mid-infrared semiconductor optical amplifiers intended for an active-passive integration platform is presented. Measured gain profiles reveal the peak values at around 2.07µm and 3dB bandwidth up to 27nm.
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