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Two-dimensional analysis of the surface recombination on current gain for 4H-SiC BJT (bipolar junction transistor) is studied. The experiment is well-matched with the simulation result, which is modeled by the continuous interface state distributions replacing the single interface state trap. The mechanism of current gain degradation is discussed.
Multi-recessed gate 4H-SiC MESFETs with a gate periphery of 5-mm are fabricated and characterized. The multi-recessed region under the gate terminal are applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device. The experimental results demonstrate that microwave output power density, power...
A novel structure of 4H-SiC bipolar junction transistor (BJT) with floating buried layer (FBL) in the base epilayer is presented. Numerical simulations are performed to demonstrate that the current gain shows an approximately 100% increase due to the creation of buried layer electric-field. However, the variation rate of current gain is decreased sharply indicating FBL structure with high current...
An improved 3D tri-gate 4H-SiC MESFETs structure with recessed drift region was proposed. The recessed drift region of the proposed structure is to reduce the channel thickness between gate and drain to increase breakdown voltage as well as to eliminate gate depletion layer extension to source/drain to decrease gate-source capacitance. The DC and RF electrical characteristics of the proposed structure...
An improved 3D tri-gate 4H-SiC MESFETs structure with recessed drift region was proposed and its DC and RF electrical performances were studied by numerical simulation. The recessed source/drain drift region of the proposed structure is to eliminate gate depletion layer extension to source/drain to decrease gate-source capacitance as well as to reduce the channel thickness between gate and drain to...
The ideal SiC/metal contacts were formed by controlling the barrier height on the ideal SiC surface. The ideal SiC surface was realized by lowering the density of surface states owing to SiC surface hydrogenation. The mechanism of surface hydrogenation was studied in this paper. Using the surface hydrogenation treatment, SiC Schottky diodes with ideality factor of 1.2-1.25 and ohmic contacts with...
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