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Based on 11-μm-thick silicon layer and 1-μm-thick buried oxide layer, a novel high-voltage thick layer SOI technology has been developed for driving plasma display panels (PDP). HV pLDMOS, nLDMOS, nLIGBT and LV CMOS are compatible with deep trench isolation. The length T, Y for HV pLDMOS and TD for HV nLDMOS are optimized to reduce the device size and satisfy the off-state breakdown voltage simultaneously...
A novel bootstrap driver suitable for high power buck converter is presented in this paper. With the help of bootstrap driver, the P type power MOSFET used in conventional buck converter can be replaced by N type power MOSFET in order to optimize efficiency and area. The proposed bootstrap driver, abandoning conventional level shift circuit, can work properly in a wide power supply range with sufficient...
A new Lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called controlled anode LIGBT (CA-LIGBT), is proposed. The design of the new structure results in high breakdown voltage and good trade off between turn-off time and on-state voltage drop. Simulation results show that the CA-LIGBT has about 85.0% reduction in turn-off time and about 20.0% increase in on-state voltage...
A novel high-voltage thin layer SOI technology based on 1-mum-thick silicon layer and 2-mum-thick buried oxide layer for driving color plasma display panels (PDP) has been developed. High-voltage pLDMOS with thick gate oxide, high- voltage nLDMOS, and low-voltage CMOS are compatible with LOCOS isolation. The proposed technology includes two aspects: first, an implantation after field oxide (IFO) technology...
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