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In this work, the AlGaN/GaN monolithic inverters were integrated by the enhancement-mode metal-oxide-semiconductor high-electron-mobility transistors (E-mode MOSHEMTs) and the depletion-mode metal-oxide-semiconductor high-electron-mobility transistors (D-mode MOSHEMTs). For the fabrication of the E-mode MOSHEMTs, the LiNbO3 (LNO) ferroelectric films deposited on the photoelectrochemically (PEC)-recessed...
To fabricate AlGaN/gallium nitride (GaN) enhancement-mode metal–oxide–semiconductor high-electron mobility transistors (E-MOSHEMTs), the gate-recessed structure and the LiNbO3 ferroelectric film were utilized in this paper. The LiNbO3 ferroelectric films deposited on the photoelectrochemically etched gate-recessed regions of the AlGaN/GaN E-MOSHEMTs as the gate insulator using a pulsed laser deposition...
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