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In this paper, a surface-potential-based (SP-based) model for AlGaN/GaN modulation-doped field-effect transistors (MODFETs) is built for the first time. First, a closed-form analytical approximation for the Fermi potential EF relative to the bottom of the conduction band at the AlGaN/GaN interface is presented and verified to be accurate enough under different biases and temperatures. Then, the potential...
Gate delay models taking process variation into account are an essential part of ascendant statistical static timing analysis (SSTA). The statistical gate delay models in being, most of which take the forms of low order polynomials, are suffering from either enormous characterization cost or poor accuracy. We propose in this paper a statistical comprehensive gate delay model including both the effects...
A charge based compact model with self-heating effects has been developed for LDMOS transistors. Both the channel and drift regions in LDMOS are modeled without adding an internal drain node. An efficient scheme for including self-heating effects is implemented in the model, which requires no thermal network. A comparison with measured data from an LDMOS shows that the model has excellent accuracy...
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