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A 6-layer continuous and uniform MoS2 film is successfully grown by thermal chemical vapor deposition (CVD) through optimizing its growth conditions, and is used as channel material to fabricate top-gated transistors by conventional lithography process. Also, the effects of a buffer layer on the electrical performance of the CVD MoS2 transistor are investigated, and enhanced carrier mobility (0.69...
Pentacene organic thin-film transistor (OTFT) using Pd as gate electrode is proposed, with high-k LaZrO as gate dielectric. The Pd film is prepared by e-beam evaporation and then the LaZrO film is deposited by reactive sputtering in Ar/O2 ambience followed by an annealing in N2 at 400 °C. The OTFT achieves an obvious increase in carrier mobility (to 1.02 cm2/V·s), as compared with its counterpart...
Electrical performance of MOS2 transistor, especially carrier mobility, can be greatly improved by screening the Columbic scattering by a high-k gate dielectric. In this work, Ti is incorporated into HfO2 to form HfTiO dielectric with a higher permittivity, which leads to further enhancement of the screening effect and thus carrier mobility. The effects of annealing ambient (N2, O2 and NH3) on the...
In this work, we investigate the static and dynamic gas response of Schottky diode based hydrogen sensor employing a Pt/WO3/n-type Si configuration. The role and importance of tungsten trioxide as an insulating layer within the device is discussed with respect to the measured electronic properties. The WO3 thin films were deposited using RF reactive magnetron sputtering. The surface morphology was...
Pentacene organic thin-film transistor (OTFT) with high-κ HfTiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm2/V·s. Moreover, the fluorine plasma treatment can shift the threshold...
In this work, we investigate how hydrogen sensing performance of thermally evaporated MoO3 nanoplatelets can be further improved by RF sputtering a thin layer of tantalum oxide (Ta2O5) or lanthanum oxide (La2O3). We show that dissociated hydrogen atoms cause the thin film layer to be polarised, inducing a measurable potential difference greater than that as reported previously. We attribute these...
A novel high-κ gate stack structure with HfON/SiO2 as dual tunneling layer (DTL), AlN as charge storage layer (CSL) and HfAlO as blocking layer (BL) is proposed to prepare the charge-trapping type of MONOS non-volatile memory device by employing in-situ sputtering method. The memory window, program/erase and retention properties are investigated and compared with similar gate stack structure with...
OTFTs with P3HT as organic semiconductor and HfTiO as gate dielectric have been studied in this work. The HfTiO dielectric film was prepared by RF sputtering of Hf and DC sputtering of Ti at room temperature. Subsequently, the dielectric film was annealed in an NH3 or N2 ambient at 200??C. Then a layer of OTS was deposited by spin-coating method to improve the surface characteristics of the gate dielectric...
HfTiON gate dielectric is fabricated by reactive co-sputtering method followed by annealing in N2 ambient. The effects of Ti content and annealing temperature on the performances of HfTiON gate-dielectric Si MOS devices are investigated. Experimental results indicate that gate capacitance is increased with increasing Ti content. However, when the Ti/Hf ratio exceeds ~1.75, increase of the gate capacitance...
In this work, Al/HfTiON/n-Si capacitors with different sputtering and annealing temperatures are studied. Larger accumulation capacitance and flat-band voltage are observed for samples with higher sputtering or post-deposition annealing temperature. Gate conduction mechanisms are only affected by sputtering temperature slightly. The flat-band voltage shift and interface-state density at midgap under...
In this work, Ge MOS capacitors with Y2O3 gate dielectric were fabricated. The effects of annealing in N2, NH3 O2 or NO ambient were investigated. Experimental results demonstrated that the NO annealing could improve both electrical properties and reliability of Ge MOS devices with Y2O3 dielectric. On the other hand, the NH3 annealing resulted in H-related traps while the O2 annealing suffered from...
A hydrogen sensor based on InGaN/GaN multiple quantum wells (MQWs) was fabricated. A gate dielectric HfTiO was added to stabilize its performance at high temperature. Its hydrogen-sensing properties were studied at high temperatures from 100??C to 500??C. The sensor showed promising hydrogen-sensing properties over a wide temperature range, and could still function beyond 500??C.
Thin LaTiON gate dielectric is deposited on Ge (100) substrate by reactive co-sputtering of La2O3 and Ti targets under different Ar/N2 ratios of 24/3, 24/6, 24/12, and 24/18, and their electrical properties are investigated and compared. Results show that the LaTiON gate-dielectric Ge MOS capacitor prepared at an Ar/N2 ratio of 24/6 exhibits highest relative permittivity, smallest capacitance equivalent...
In this paper, a compact threshold-voltage model is developed for stack high-k gate-dielectric MOSFET with a thin interlayer. The simulated results are in good agreement with 2-D simulations. The influences of k value of the interlayer on threshold behaviors are investigated in detail. A low-k interlayer can effectively improve the threshold-voltage behaviors. Furthermore, the ratio of low-k interlayer...
Hafnium oxide (HfO2) is successfully used as gate insulator for fabricating metal-insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled...
Si MOS capacitors with HfTa oxide and oxynitride as gate dielectric were fabricated. Moreover, AlOxNy or TaOxNy was used as the interlayer between HfTa oxynitride and Si substrate to improve the electrical quality of the capacitors. Experimental results showed that the HfTaOxNy capacitor with TaOxNy interlayer achieved better performance with larger capacitance and smaller leakage current than its...
HfTiO/GeOxNy and HfTiOn/GeOxNy stack gate dielectric are prepared by using wet-NO or wet-N2O pretreatment on Ge substrate. Experimental results show that the wet NO pretreatment can lead to excellent interface properties, gate leakage properties and device reliability, especially for the HfTiON/GeOxNy dielectric. The involvement mechanisms lie in the roles of N in blocking oxygen diffusion and Ge...
Polymer thin-film transistors (PTFTs) based on MEH-PPV semiconductor are fabricated by spin-coating process and characterized. Gate-bias and drain-bias stress effects at room temperature are observed in the devices. The saturation current decreases and the threshold voltage shifts toward negative direction upon the gate-bias stress. However, the saturation current increases and the threshold voltage...
Pentacene-based organic thin-film transistor (OTFT) with HfO2 as gate dielectric is studied in this work. The HfO2 dielectric was prepared by RF sputtering at room temperature, and subsequently annealed in N2O or NH3 at 200degC. The OTFTs were characterized by IV measurement and 1/f noise measurement. The OTFTs show small threshold voltage and can operate at as low as 3 V. Results indicate that the...
Olfactory bulb (OB) is one of the most developed systems in rodent models with complex neuronal organization and anatomical structures. MR diffusion tensor imaging (DTI) is a non-invasive technique to probe tissue microstructures by examining the diffusion characteristics of water molecules. This paper presents how different OB layers can be identified and quantitatively characterized by micro-DTI...
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