Search results for: J.P. Xu

Items from 1 to 20 out of 85 results

article

Construction of Z-scheme Cu2O/Cu/AgBr/Ag photocatalyst with enhanced photocatalytic activity and stability under visible light

J. He, D.W. Shao, L.C. Zheng, L.J. Zheng, more

Applied Catalysis B: Environmental > 2017 > 203 > C > 917-926

A series of Cu₂O/Cu/AgBr/Ag photocatalysts were synthesized by a redox procedure followed by photo-assisted deposition. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were utilized to characterize the structure of the system. It is found that Cu nanoparticles (NPs) could be controllable to grow in between...

article

Correlation between ferromagnetism and the concentration of interfacial defects in multiferroic Bi7Fe2.75Co0.25Ti3O21 studied by positron annihilation

W.N. Ge, X.N. Li, J.P. Xu, S.J. Huang, more

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions... > 2017 > 394 > C > 61-66

This paper investigated the effect of the annealing temperature on the interfacial defects and the magnetization of a single-phase multiferroic Bi₇Fe_2.75Co_0.25Ti₃O_21. With the increase of annealing temperature, the average thickness of the nonaplates increased from 80 to 180nm. But the magnetic property measurement shows that the saturation magnetization gradually decreases with the increase of the...

chapter

Improved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer

L. N. Liu, H. W. Choi, P. T. Lai, J.P. Xu

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) > 350 - 353

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

GaAs MOS capacitor with HfLaON as passivation layer and HfTiON as gate dielectric is fabricated and compared with its counterparts with LaON as passivation layer and no passivation layer. Results show that the sample exhibits better electrical properties: smaller hysteresis, higher k value (23.87), lower interface state density (9×10⁻⁵ cm⁻² eV⁻¹), lower leakage current (4.37×10⁻⁵ A/cm² at Vfb+1V),...

article

A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric

Feng Ji, J.P. Xu, L. Liu, W.M. Tang, more

Microelectronics Reliability > 2016 > 57 > C > 24-33

A 2-D analytical threshold-voltage model for ultra-thin-body MOSFET with buried insulator and high-k gate dielectric is established by solving the 2-D Poisson's equation for the gate-dielectric, channel and buried-insulator regions. The validity of the model is confirmed by comparing with experimental data and other models. Using the model, the influences of gate-dielectric permittivity, buried-insulator...

article

Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer

H.H. Lu, J.P. Xu, L. Liu, L.S. Wang, more

Microelectronics Reliability > 2016 > 56 > C > 17-21

The interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with yittrium-oxynitride interfacial passivation layer treated by N₂−/NH₃-plasma are investigated, showing that lower interface-state density (1.24×10¹²cm⁻²eV⁻¹ near midgap), smaller gate leakage current density (1.34×10⁻⁵A/cm² at V_fb+1V), smaller capacitance equivalent thickness (1.43nm), and larger equivalent...

article

Donepezil improves learning and memory deficits in APP/PS1 mice by inhibition of microglial activation

H.B. Guo, Y.F. Cheng, J.G. Wu, C.M. Wang, more

Neuroscience > 2015 > 290 > Complete > 530-542

Donepezil, a cholinesterase inhibitor, is a representative symptomatic therapy for Alzheimer’s disease (AD). Recent studies have reported the anti-inflammatory effects of donepezil. However, limited studies that investigate its anti-inflammatory effect in AD have been reported. Considering the role of proinflammatory molecules and microglial activation in the pathogenesis of AD, the current study...

article

A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric

Y. Huang, J.P. Xu, L.S. Wang, S.Y. Zhu

Microelectronics Reliability > 2015 > 55 > 2 > 342-346

An inversion-channel electron mobility model for InGaAs n-channel metal–oxide-semiconductor field-effect transistors (nMOSFETs) with stacked gate dielectric is established by considering scattering mechanisms of bulk scattering, Coulomb scattering of interface charges, interface-roughness scattering, especially remote Coulomb scattering and remote interface-roughness scattering. The simulation results...

article

Sediment concentrations, flow conditions, and downstream evolution of two turbidity currents, Monterey Canyon, USA

J.P. Xu, Octavio E. Sequeiros, Marlene A. Noble, J.P. Xu, more

Deep-Sea Research Part I > 2014 > 89 > Complete > 11-34

The capacity of turbidity currents to carry sand and coarser sediment from shallow to deep regions in the submarine environment has attracted the attention of researchers from different disciplines. Yet not only are field measurements of oceanic turbidity currents a rare achievement, but also the data that have been collected consist mostly of velocity records with very limited or no suspended sediment...

article

Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory

J.X. Chen, J.P. Xu, L. Liu, X.D. Huang, more

Microelectronics Reliability > 2014 > 54 > 2 > 393-396

Tunneling–barrier engineered stacks with different high-κ dielectrics are investigated by fabricating the stacked structures of Al/Al ₂ O ₃ /HfLaON/ (TaON/SiO ₂ )/Si and Al/Al ₂ O ₃ /HfLaON/ (HfON/SiO ₂ )/Si. As compared to the device with HfON/SiO ₂ dual tunnel layer (DTL), the one with TaON/SiO ₂ DTL shows larger memory window (3.85V...

article

Repeated administration of AC-5216, a ligand for the 18kDa translocator protein, improves behavioral deficits in a mouse model of post-traumatic stress disorder

Zhi-Kun Qiu, Li-Ming Zhang, Nan Zhao, Hong-Xia Chen, more

Progress in Neuropsychopharmacology & Biological Psychiatry > 2013 > 45 > Complete > 40-46

Post-traumatic stress disorder (PTSD) is a severely disabling anxiety disorder that may occur following exposure to a serious traumatic event. It is a psychiatric condition that can afflict anyone who has experienced a life-threatening or violent event. Previous studies have shown that changes in 18kDa translocator protein (TSPO) expression (or function), a promising target for treating neurological...

article

Effect of output capacitor ESR on dynamic performance of voltage-mode hysteretic controlled buck converter

B.C. Bao, J. Yang, J.P. Xu, X. Zhang, more

Electronics Letters > 2013 > 49 > 20 > 1293 - 1294

Different types of capacitors have different parameters, e.g. equivalent series resistance (ESR) and capacitance. In switching DC-DC converters with voltage-mode (VM) hysteretic control, the output capacitor ESR has a significant effect on dynamic performance. In this reported work, two critical conditions of the output capacitor ESR for mode shifting and normal operation of the VMhysteretic controlled...

article

Critical ESR of output capacitor for stability of fixed off-time controlled buck converter

B.C. Bao, X. Zhang, J.P. Xu, J.P. Wang

Electronics Letters > 2013 > 49 > 4 > 287 - 288

Fixed off-time control, contrasting with constant on-time control, has been widely used for power supply controllers in industry owing to its fast transient response. However the equivalent series resistance (ESR) of the output capacitor has a great effect on the control performance. In this reported work, the critical ESR of the output capacitor for the stability of the fixed off-time controlled...

article

Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal–oxide–nitride–oxide–silicon memory

L. Liu, J.P. Xu, J.X. Chen, F. Ji, more

Thin Solid Films > 2012 > 524 > Complete > 263-267

A high-k gate stack structure with ultrathin HfON/SiO₂ as dual tunneling layer (DTL), AlN as charge storage layer (CSL) and HfAlO as blocking layer (BL) is proposed to make a charge-trapping-type metal–oxide–nitride–oxide–silicon non-volatile memory device by employing in-situ sputtering method. The validity of the structure is examined and confirmed by transmission electron microscopy. The memory...

article

A study of the impact of emotional distress following the 5.12 Wenchuan earthquake

J.P. Xu, Y.Z. Feng

Public Health > 2012 > 126 > 4 > 286-288

article

Effects of thermo-mechanical treatment and microalloying with Cr, Nb and Ti on phase transformation in C–Mn steel strips produced by compact strip production process

Y.Z. Zhu, D.M. Liang, J.C. Li, J.P. Xu, more

Materials Science & Engineering A > 2011 > 528 > 29-30 > 8365-8373

The C–Mn steel strips microalloyed with Cr, Nb, Ti was produced by compact strip production process and then heat-treated under different conditions. Optical microscopy, scanning electron microscopy, energy dispersive spectroscopy and transmission electron microscopy were used to investigate phase transformations in the steel after different treatments. It was revealed that the phase transformations...

article

A partition-of-unity based ‘FE-Meshfree’ QUAD4 element with radial-polynomial basis functions for static analyses

J.P. Xu, S. Rajendran

Computer Methods in Applied Mechanics and Engineering > 2011 > 200 > 47-48 > 3309-3323

Recently, a partition-of-unity (PU) based finite element called ‘FE-Meshfree’ QUAD4 element has been published. That element employed polynomial basis functions for the local approximation (LA). In the present paper, a new FE-Meshfree QUAD4 element employing hybrid radial-polynomial basis functions for the LA is proposed. An advantage of radial-polynomial basis is the freedom from the possible singularity...

article

Electrical properties of Ge metal-oxide-semiconductor capacitors with La2O3 gate dielectric annealed in different ambient

H.X. Xu, J.P. Xu, C.X. Li, P.T. Lai

Thin Solid Films > 2010 > 518 > 23 > 6962-6965

Ge metal-oxide-semiconductor capacitors with La ₂ O ₃ as gate dielectric are fabricated by e-beam evaporation of La ₂ O ₃ followed by post-deposition annealing in different gases (NH ₃ , N ₂ , NO, N ₂ O and O ₂ ). Experimental results indicate that the NH ₃ , NO, N ₂ O and O ₂ anneals give higher interface-state...

article

A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode

J.P. Xu, X. Xiao, P.T. Lai

Microelectronics Reliability > 2010 > 50 > 8 > 1081-1086

A mobility model for high-k gate-dielectric Ge pMOSFET with metal gate electrode is proposed by considering the scattering of channel carriers by surface-optical phonons in the high-k gate dielectric. The effects of structural and physical parameters (e.g. gate dielectric thickness, electron density, effective electron mass and permittivity of gate electrode) on the carrier mobility are investigated...

article

Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric

C.X. Li, C.H. Leung, P.T. Lai, J.P. Xu

Solid State Electronics > 2010 > 54 > 7 > 675-679

In this work, Ge p-MOS capacitors with HfTiON gate dielectric were fabricated by sputtering method. Pre-deposition fluorine plasma treatment and post-deposition fluorine plasma annealing were used to improve the electrical and reliability properties of Ge p-MOS capacitors. Experimental results showed that both methods could improve the interface quality with lower interface-state density, less frequency...

article

Event-driven sediment flux in Hueneme and Mugu submarine canyons, southern California

J.P. Xu, Peter W. Swarzenski, Marlene Noble, An-Chun Li

Marine Geology > 2010 > 269 > 1-2 > 74-88

Vertical sediment fluxes and their dominant controlling processes in Hueneme and Mugu submarine canyons off south-central California were assessed using data from sediment traps and current meters on two moorings that were deployed for 6months during the winter of 2007. The maxima of total particulate flux, which reached as high as 300+g/m ² /day in Hueneme Canyon, were recorded during winter...

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Search results for: J.P. Xu

Construction of Z-scheme Cu2O/Cu/AgBr/Ag photocatalyst with enhanced photocatalytic activity and stability under visible light

Correlation between ferromagnetism and the concentration of interfacial defects in multiferroic Bi7Fe2.75Co0.25Ti3O21 studied by positron annihilation

Improved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer

A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric

Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer

Donepezil improves learning and memory deficits in APP/PS1 mice by inhibition of microglial activation

A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric

Sediment concentrations, flow conditions, and downstream evolution of two turbidity currents, Monterey Canyon, USA

Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory

Repeated administration of AC-5216, a ligand for the 18kDa translocator protein, improves behavioral deficits in a mouse model of post-traumatic stress disorder

Effect of output capacitor ESR on dynamic performance of voltage-mode hysteretic controlled buck converter

Critical ESR of output capacitor for stability of fixed off-time controlled buck converter

Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal–oxide–nitride–oxide–silicon memory

A study of the impact of emotional distress following the 5.12 Wenchuan earthquake

Effects of thermo-mechanical treatment and microalloying with Cr, Nb and Ti on phase transformation in C–Mn steel strips produced by compact strip production process

A partition-of-unity based ‘FE-Meshfree’ QUAD4 element with radial-polynomial basis functions for static analyses

Electrical properties of Ge metal-oxide-semiconductor capacitors with La2O3 gate dielectric annealed in different ambient

A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode

Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric

Event-driven sediment flux in Hueneme and Mugu submarine canyons, southern California

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