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Figure 1(a) shows the degradation of the transfer characteristics of a typical FinFET with Wfin = 10 nm, measured at Vd = 0.03 V after HC stress at Vstress = 1.8 V for different stress times. The degradation of the device parameters Vt, η and on-state drain current is clearly observed. The positive Vt shift indicates the built-up of a negative charge in the gate dielectric. The negative charge can...
Analysis of the operation of CMOS gates is a complicated procedure. These gates can be replaced by equivalent inverters and therefore the expressions for the inverters are used to determine the electrical characteristics of the gates. In this paper, the equivalent inverter approach for replacing CMOS gates is evaluated. The NAND gate is used for this evaluation. Parametric expressions are created...
Our analytical compact drain current model for undoped or lightly doped nanoscale FinFETs has been successfully used to predict variability in the electrical characteristics of FinFETs. A simplified version of the model behaves almost as good as the analytical model but is more computational time efficient. Implementation of the models in verilog-A can be used to predict variability in circuits such...
A new simple unified analytical compact model for the amorphous InGaZnO Thin Film Transistors is proposed based on an analytical drain current model that uses a Gaussian distribution of subgap states, which is approximated by two exponential distributions. The model is continuous on all regions of operation, accurate also for the first derivatives of the transfer and output characteristics. A simple...
Based on a Gaussian distribution for the subgap states of amorphous InGaZnO transistors, a new methodology is developed for the extraction of the electrical parameters of the transistors. The calculated non-linear Y-function is transformed to a linear one, adopting a mobility model that fits the classical methodology of Y-function traditionally used in MOSFETs. The efficiency of the new Y-function...
Analytical compact model for the drain current and trans-capacitances of undoped or lightly doped nanoscale FinFETs with trapezoidal cross section is presented. The compact model of rectangular FinFETs is applied in trapezoidal FinFETs using the concept of the equivalent device parameters. The model is compared with the results of three-dimensional numerical device simulations. The overall results...
In this work, analytical compact model for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding-gate (SG) MOSFETs is proposed. The double-gate (DG) model is extended to SG model using equivalent geometrical parameters. The developed model is described by single analytical equations valid in all regions of operation, from the subthreshold to strong inversion and from...
A simple unified analytical compact drain current model for undoped (or lightly doped) triple-gate FinFETs is presented, functional for all regions of operation. A unified normalized sheet charge density is used where the behavior of the subthreshold region is embedded within the expressions commonly used to describe the inversion region. The model can be used as a basis for the development of a short-channel...
An analytical compact drain current model for undoped (or lightly doped) short-channel triple-gate (TG) FinFETs is presented, taking into account quantum mechanical and short-channel effects such as threshold voltage shift, drain-induced barrier lowering and subthreshold slope degradation. In the saturation region, the effects of series resistance, surface-roughness scattering, channel-length modulation...
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