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In this work the impact of the source - drain series resistance mismatch on the drain current variability has been investigated for 28nm Bulk MOSFETs. For the first time a mismatch model including the local fluctuations of the threshold voltage, the current gain factor and the source - drain series resistance both in linear and saturation region is presented. Furthermore, it is proved that the influence...
Figure 1(a) shows the degradation of the transfer characteristics of a typical FinFET with Wfin = 10 nm, measured at Vd = 0.03 V after HC stress at Vstress = 1.8 V for different stress times. The degradation of the device parameters Vt, η and on-state drain current is clearly observed. The positive Vt shift indicates the built-up of a negative charge in the gate dielectric. The negative charge can...
A full front gate voltage range parameter extraction technique is developed taking into account both the back gate voltages and the channel length. The method is easily applicable to extract precisely all electrical parameters of advanced nano-scale FDSOI MOSFETs.
The HC degradation of nanoscale FD-SOI n-MOSFETs has been investigated under the worst bias stress conditions (Vds,stress = Vgs,stress). At high stress voltages the hot carriers injected into the gate dielectric are the main degradation mechanism, superseding the interface degradation. The proposed degradation mechanisms are supported with the interface and gate dielectric trap properties extracted...
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