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This work demonstrates the trench P/N hybrid nanowires (NWs) channel junctionless thin film transistors (JL-TFT) with gate-all-around (GAA) structure. The GAA NWs hybrid JL-TFT exhibits the good electrical properties, including high ON/OFF current ratio (>106), subthreshold slope (136 mV/dec.), and low DILB (60 mV/V). This trench hybrid P/N channel JL-TFT is simple to fabricate and highly favorable...
This work demonstrates p-type hybrid poly-Si fin channel junctionless field-effect transistor (JL-FET) with trench structure by dry etching process. This JL-FET shows superior performance in a low drain-induced barrier lowering (<10mV/V) and high Ion/Ioff (>108) for Leff = 1μm, excellent gate control.
A Si ultra-thin body (UTB) junctionless field-effect transistor (UTB-JLFET) with LG = 1 nm and LG = 3 nm have been demonstrated by solving the coupled driftdiffusion (DD) and density-gradient (DG) model. The simulation results show that the Si can be used in ultra-short channel device as long as UTB is employed. As UTB is employed, ultra-short channel device does not need to follow an empirical rule...
We for the first time evaluate the 3-nm gate Length (LG=3nm) inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode Silicon bulk FinFET performance with optimized nano-fin structure (FW=FH=3nm) using 3-D quantum transport device simulation. The excellent electrical characteristics of LG=3nm Si bulk FinFET are reported. The sub threshold slope values (SS∼65mV/dec.) and drain-induced...
Agate-all-around (GAA) with trench structure poly-Si channel junctionless Field-Effect Transistor (JL-FET) has been successfully demonstrated. This JL-FET shows excellent performance in a low drain-induced barrier lowering (DIBL), a steep Sub-threshold Swing (SS) ∼70 mV/decade and high ION/IOFF (>108) ratio.
The novel trench junctionless poly-Si thin-film transistor (trench JL-TFT) with ultra-thin body (2.4 nm) is utilized to simple dry etching process. This novel devices show excellent performance in terms of steep SS (99 mV/dec.) and high ION/IOFF (>107). The ION current of the ultra-thin body (UTB) JL-TFT is increased by quantum confined effect.
In this study, we for the first time assess the characteristics and sensitivity of p-type junctionless (JL) gate-all around (GAA) nanowire transistor using 3D quantum transport device simulation for CMOS technology implementation. Since the doping concentration of p-type junctionless nanowire transistor does not as high as in n-type device due solid solubility of boron in silicon, it can be made by...
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