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We proposed a new 1T-DRAM cell with raised source structure. The cell using the raised source region can achieve the characteristics of long gate length one in a limited area and it can suppress short channel effects to improve the gate controllability. Also, since the raised source structure, the drain and source junctions of the cell will not to contact together so that the device does not appear...
In this paper, we propose a novel SOI-based double-gate MOSFET with pillar structure for capacitorless one transistor dynamic random access memory (1T-DRAM) application, which has Fin-gate and Bottom-Gate, and we name it as the FBG 1T-DRAM. The proposed FBG 1T-DRAM cell has an additional storage region, which can increase the holes storage. In terms of the memory performance, we obtained about 61...
In this paper, a novel device structure called the SONOS non-volatile memory with side-block oxide (SBOSO-NOS-NVM) has been demonstrated. The SBOSO-NOS-NVM enhances the program/erase (P/E) speed and memory window by using Fowler-Nordheim (FN) injection mechanism, when compared with SONOS non-volatile memory without side-block oxide (SONOS-NVM). The SBOSONOS-NVM still has excellent characteristics...
Methylmalonic acidemia caused by an l-methylmalonyl-CoA mutase deficiency. The mut 0 type is associated with significant mortality and morbidity, but tandem mass spectrometry has made early detection possible. Five patients were identified through newborn screening for elevated propionylcarnitine (C3-carnitine) levels. These patients received a positive screening result at a median age of...
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