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Recently, the 3D stacked memory, which is known as HBM (high bandwidth memory), using TSV process has been developed. The stacked memory structure provides increased bandwidth, low power consumption, as well as small form factor. There are many design challenges, such as multi-channel operation, microbump test and TSV connection scan. Various design methodology make it possible to overcome the difficulties...
Motivated by a graphics memory system that achieves multiplied bandwidth by the number of memories per system, HBM DRAM adopts a brand new architecture, with many technical changes and challenges. The first main change in the architecture is the stacked memory structure with TSV array, which has independent bandwidth per slice. The second is semi-independent row, column command interface, which enhances...
For the heterogeneous-structured high bandwidth memory (HBM) DRAM, it is important to guarantee the reliability of TSV connections. An exact TSV current scan and repair method is proposed, that uses similar to the correlated double sampling method. The register-based pre-repair method improves testability. The measurement results for thousands of TSV shows impedance distribution under 0.1 ohm. Methods...
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