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Physically meaningful and easy-to-use analytical predictive stress models are developed for a through-silicon-via (TSV) design using theory-of-elasticity based approach. Two extreme cases of the TSV height-to-diameter ratios are considered: disc-like vias, with the aspect ratios below 0.25 (plane stress approximation can be employed in this case), and rod-like-vias, with aspect ratios, above 2.5 (plane...
The rapid technological advancements and market demands in electronic sector requires application of highly accelerated, still practice relevant reliability assessment methods. At present, accelerated power and temperature cycling tests count as the state of the art for qualification of the devices. However due to physical characteristics of the devices, there are limitations to accelerated thermal...
Physically meaningful and easy-to-use analytical solutions are obtained, using analytical modeling and theory-of-elasticity approach, for thermal stresses in typical through-silicon-via (TSV) packages of 3D IC devices. The case when the package is heated up from the room temperature to an elevated temperature is considered. Two extreme cases of the TSV geometry are addressed: disc-like vias, with...
Despite all the today's effort, devices and systems that underwent the highly popular highly-accelerated-life-testing (HALT), passed the existing qualification tests (QT) and survived the burn-in testing (BIT), often fail in the field. Are these tests, specifications and practices adequate? If not, could they be improved to an extent that for a product that passed the QT and survived the appropriate...
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