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The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL<10 mV/V), sub threshold...
Different spatial charge trapping distribution effect on off-state degradation in power LDMOS was studied. Electron trapping phenomena is thermally grown in silicon dioxide (SiO2). Due to charge can be trapped in the oxide, it can make structural defects, oxidation-induced defects, impurities, or other defects caused by Si-O-bond breaking process. This process can increase leakage current and cause...
In this work, high voltage NLDMOS performance in terms of high blocking voltage and On-Resistance have been investigated. In order to obtain the optimum electrical performance several key factors have been optimized such as linearity of HVNW profile, drift length and source field plate. Linear HVNW profile is obtained by linearity of HVNW mask. NLDMOS having blocking voltage of 100 V–300 V and lower...
Ion implantation is a standart doping technique for semiconductor material. For shallow junction device, accurate predictions of ion implantation profiles are essential for process development and device characterization. For this purpose, accurate prediction of the doping profiles resulted from ion implantation will be studied using a few models of ion implantation. We collected data of BF2 as P-type...
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