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Recent advances of integrated nanophotonic devices in terms of energy consumption and latency, especially about OE/EO conversion, are reviewed, and their potential application to ultralow-latency optical computing based on optical pass-gate logic will be discussed.
We demonstrated directly modulated telecom-band sub-wavelength (diameter ∼114 nm) nanowire lasers on silicon photonic crystal for the first time. The dynamic properties were estimated using a photon counting system. A 10Gb/s opened eye-diagram was obtained.
We first propose a two-dimensional photonic crystal platform for optomechanically modulating the spontaneous emission. The platform consists of two slotted photonic crystal cavities for optomechanical pumping and emission enhancement respectively, where there is a shared barrier oscillator to bridge the optomechanical dynamics of these two cavities.
We demonstrated an InAsP/InP nanowire laser (diameter ∼100 nm) in telecommunication band on an Si photonic crystal platform. By measuring light-in versus light-out curves, linewidth, emission rate, and photon correlation, lasing oscillation has been unambiguously demonstrated.
By adopting high β buried-multiple-quantum-well photonic crystal nanocavities, we have demonstrated smooth lasing operation, which indicates thresholdless-like lasing theoretically predicted, by mean of light-in versus light-out curve analysis, linewidth analysis, and photon correlation measurements.
We fabricated a unique system in which a semiconductor nanowire and a gold bowtie nanoantenna are combined. InP nanowire is precisely placed in the nanogap of the nanoantenna with a nanomanipulator installed in a focused ion beam system. By measuring the intensity mapping of the photoluminescence from the nanowire, we observed a significantly large enhancement at the antenna gap. We also calculated...
A photonic-crystal nanocavity is induced by a III/V nanowire in a line defect in a Si photonic crystal with several serially-connected lattice constants. The resonant wavelength changes by moving the nanowire along the line defect.
We propose a new design for buried heterostructure photonic crystal nanocavity lasers with in-line coupled output waveguides and coupling buffer regions. This design enables us to realize single-mode lasing and a high output power for a current-injected nanolaser.
We have developed an electrically driven photonic-crystal nanocavity laser with an ultra-low threshold current and a high temperature characteristic. Lasing is achieved under continuous-wave operation at high temperatures of up to 95°C.
We have successfully developed an electrically driven photonic-crystal nanocavity laser. Thanks to the development of an ultra-compact embedded active-region structure, a record low threshold current and energy needed for transferring a single bit are achieved.
We propose a position controlled nanocavity from a single semiconductor nanowire inside a slot of photonic crystals. A cavity is created by modifying the refractive index in the line defect using a nanowire. Preliminary experiments are shown.
Buried-heterostructure photonic-crystal cavities strongly confine photons and carriers. Here, we demonstrate that we can greatly enhance and suppress the spontaneous emission rate in them by the cavity quantum-electrodynamics effect.
We demonstrate an electrically driven photonic-crystal nanocavity laser with an InAlAs sacrificial layer. The laser exhibits an ultralow threshold current of 7.8 μA and an energy cost of 14 fJ/bit with 12.5-Gbit/s direct modulation.
We experimentally investigate the inhibited spontaneous emission of telecom-band InAs quantum disks in InP nanowires near gold, SiO2, and silicon interfaces. We have evaluated how the inhibition is affected by different interfaces and disk thickness.
We demonstrate on-chip optical interconnects consisting of integrated photonic crystal (PhC) lasers and photodetectors. Current-blocking trenches effectively reduce the leakage current in the two-dimensional PhC slab, resulting in ultralow operating energy of 17.3 fJ/bit.
We successfully increase the output power of an electrically driven photonic crystal laser. By using a six-quantum-well structure and decreasing the series resistance, the device, having 32-μA threshold current, exhibits 39.3-μW output power. We also demonstrate bit-error rate measurements with 10-Gbit/s signal without using optical amplifier.
An electrically driven photonic-crystal nanocavity laser with a buried heterostructure exhibits a record low threshold current of 14 µA at 25°C. High-temperature operation up to 95°C is achieved by using the InGaAlAs-based multiple-quantum-well active region.
The on-chip integration of all-optical random-access memories based on a photonic crystal nanocavity was achieved. Their ultralow power consumption, small footprint, and 40-Gb/s optical signal capability might be beneficial for future optical packet processing.
An all-optical random-access memory with an ultralow power consumption of 30 nW was achieved by using a photonic crystal nanocavity. Integrated o-RAM chip operation for 4-bit, 40-Gb/s signal was also demonstrated for the first time.
We have developed an electrically pumped photonic-crystal nanocavity laser, operating at room temperature. Employing an ultracompact embedded active region, the direct modulation is achieved at 10-Gbit/s with ultra-low operating energy. It opens up a novel application area for lasers, namely the optical interconnects for computercom.
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