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With isothermal annealing treatment at 1873 K, unintentionally doped 4H-SiC epitaxial layers grown by low-pressure chemical vapor deposition (LPCVD) have been studied using electron spin resonance (ESR) and low temperature photoluminescence (PL). ESR and PL spectra show that the native defects are the mixture of carbon vacancy (VC) and its extended point defects. The decrease of key parameter g vector...
With Vanadium ion implantation semi-insulating 4H-SiC layer has been investigated. For n-type and p-type 4H-SiC, resistivities have been reached 7.6times106middotcm and 1.6times1010middotcm respectively after 1650degC annealing. Perfect surface morphology has been observed using a simple Carbon coating film protection. The Vanadium energy levels in forbidden band of n-type 4H-SiC were confirmed as...
An array of TLM(transfer length method) test patterns is formed on N-wells created by P+ ion implantation into Si-faced p-type 4H-SiC epilayer. The Ge+ ion implantations are used to form the intermediate semiconductor layer (ISL) of nickel-metal ohmic contacts to n-type 4H-SiC. The specific contact resistance pc as low as 4.23 times 10-5 Omegacm2 is achieved after annealing in N2 at 800 degC for 3...
In this paper, a CAD oriented self-heating effects model for 4H-SiC MESFETs is presented. We firstly give a brief derivative which combined a CAD-oriented quasi-analytical drain current model and the principle of self-heating effects for 4H-SiC MESFET, secondly present a relationship of the main parameters verses temperature for circuit oriented design, leading to a complete expression of self-heating...
In this paper, in order to improve PECVD SiC's electronics performance, in-situ doped together with laser annealing technology was put forward. NH3 was introduced as source of N in-situ doping, and laser annealing was done after deposition. Laser annealing can change the amorphous in-situ doped PECVD SiC to poly crystal, the size of crystal was growing with laser energy density, meanwhile it increasing...
The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P+ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance rhoc as low as 8.64 times 10-6 Omegacm2 is achieved after annealing in N2 for 5 min at 900degC. The result for sheet resistance R...
Silicon carbide (SiC) is a promising material for the device operating in hash environment, such as high temperature, high pressure or erodent environment, owning to its excellent electrical, mechanical, and chemical properties. The PECVD process allows deposition of SiC at low temperature (200degC-400degC), which makes SiC has better compatibility in Post-CMOS processes. In this paper, PECVD SiC...
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