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A modified gain modeling shows Ge has a wide gain bandwidth from 1550 nm to 1770 nm. Optimized laser structure predicts that Ge laser can achieve a lasing threshold of 2.2 kA/cm2.
Electronic–photonic synergy has become an increasingly clear solution to enhance the bandwidth and improve the energy efficiency of information systems. Monolithic integration of optoelectronic devices is the ideal solution for large-scale electronic–photonic synergy. Due to its pseudo-direct gap behavior in optoelectronic properties and compatibility with Si electronics, epitaxial Ge-on-Si has become...
We present an active carrier concentration of 3 × 1019 cm−3 in epitaxial Ge-on-Si for light emitting devices by dopant enhanced in-diffusion of phosphorus from a high-level dopant reservoir.
Edge-emission electroluminescence from waveguide Ge-on-Si pnn heterojunction diode structures is demonstrated. Selective growth of highly phosphorus doped Ge in oxide trenches shows promise as a design for electrically pumped laser on Si.
Tensile strained Ge films with P concentrations as high as 3.4 × 1019 cm−3 are grown using UHVCVD. Photoluminescence measurements reveal significant direct band gap narrowing, enhanced photoemission, and optical bleaching.
Lasing from Ge was achieved by highly n-type doping and biaxially tensile strain to overcome free carrier absorption. High n-type doping and efficient carrier injection remain the most important issues for electrical excitation of lasing.
We report room temperature Ge-on-Si lasers with direct gap emission at 1590–1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility of electrically pumped lasers.
We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n+ Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si.
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