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We demonstrate field-effect transistors (FETs) fabricated on the basis of individual carbon nanotubes (CNTs) with top- and side-gate configurations using two different dielectric layers, SiO2 and Al2O3. Transport properties of the FETs are investigated using noise spectroscopy before and after low-dose gamma irradiation treatment (106 rad). A strong generation-recombination (GR) noise component observed...
In recent years, considerable attention has been focused on studies on the influence of gamma radiation treatments on the performance of semiconductor materials and devices, which are very important for spacecraft applications. Among the different objects studied, carbon-nanotube-based (CNT) structures are considered promising due to their unique properties. There are a number of publications concerning...
We present the program MCAnScat which simulates propagation of beams of down-converting phonons in anisotropic cubic and isotropic media containing point mass defects. It is assumed that the excitation the phonon subsystem is low-level. The program produces time-of-flight spectrograms and phonon energy and quasi-momentum focusing patterns for samples having the form of a rectangular parallelepiped,...
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