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We demonstrate field-effect transistors (FETs) fabricated on the basis of individual carbon nanotubes (CNTs) with top- and side-gate configurations using two different dielectric layers, SiO2 and Al2O3. Transport properties of the FETs are investigated using noise spectroscopy before and after low-dose gamma irradiation treatment (106 rad). A strong generation-recombination (GR) noise component observed...
Low-frequency noise in an electrolyte-insulator-semiconductor (EIS) structure functionalized with multilayers of polyamidoamine (PAMAM) dendrimer and single-walled carbon nanotubes (SWNT) is studied. The noise spectral density exhibits dependence with the power factor of and for the bare and functionalized EIS sensor, respectively. The gate-voltage noise spectral density is practically independent...
In recent years, considerable attention has been focused on studies on the influence of gamma radiation treatments on the performance of semiconductor materials and devices, which are very important for spacecraft applications. Among the different objects studied, carbon-nanotube-based (CNT) structures are considered promising due to their unique properties. There are a number of publications concerning...
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