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AlGaN/GaN nanowire omega-FinFETs have been fabricated and characterized. Tetramethylammonium hydroxide (TMAH) lateral wet etching and atomic layer deposited (ALD) HfO2 sidewall spacer result in very sharp vertical edges and fin widths from 200 nm down to 30 nm. Omega-gate structure exhibits excellent gate controllability and separates the channel from the underlying thick GaN buffer layer, which leads...
Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width ($W_{\mathrm{ fin}}$ ) of 120 nm, a fin height ($H_{\mathrm{ fin}})$ of 250 nm, and a gate length ($L_{G}$ ) of 200 nm. The proposed device achieved very low drain leakage ($I_{\mathrm{ off}}) < 8 \times 10^{-8}$ A/mm at 7 V and $< 1 \times 10^{-6}$ ...
A Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems has been design and analyzed. Based on our previous work, which investigate Si-based arch-shaped GAA TFET, a Si/Ge heterojunction structure is adopted for engineering the tunneling bandgap. The epitaxially grown channel thickness (tepi) and...
We propose InGaAs-based junctionless transistor (JLT) with dual-spacer dielectric and a gate length (LG) of 5 nm for low power loss and high frequency mobile network system. The dual-spacer dielectric consisting of HfO2 and SiO2 increases an effective gate length (Leff) due to a high fringe field. The increased Leff reduces significantly the off-state current (Ioff) by suppressing leakage currents...
In this work, dependence of device performances on AlGaN/GaN heterostructure recessed-gate fin-shaped-channel field-effect transistor (FinFET), as a power transistor, on the fin dimensions is closely investigated. On-state (Ion) and off-state (Ioff) currents are affected by fin geometry and the former showed a more drastic change (250∼1209 mA/mm) compared with the latter (confined to ∼1×10−12 mA/mm...
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