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A Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems has been design and analyzed. Based on our previous work, which investigate Si-based arch-shaped GAA TFET, a Si/Ge heterojunction structure is adopted for engineering the tunneling bandgap. The epitaxially grown channel thickness (tepi) and...
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