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In this work, dependence of device performances on AlGaN/GaN heterostructure recessed-gate fin-shaped-channel field-effect transistor (FinFET), as a power transistor, on the fin dimensions is closely investigated. On-state (Ion) and off-state (Ioff) currents are affected by fin geometry and the former showed a more drastic change (250∼1209 mA/mm) compared with the latter (confined to ∼1×10−12 mA/mm...
We have proposed a tunneling field-effect transistor (TFET) having a GaAs/InGaAs heterojunction structure for radio frequency (RF) application. The GaAs/InGaAs heterojunction TFETs are investigated in terms of DC and RF characteristics by using the device simulation technology. The proposed TFET showed excellent subthreshold swing (S) and on/off current ratio as low standby power (LSTP) devices. Moreover,...
A normally-off recess-gated GaN/AlGaN MOSFET which applicable at green-energy system and automobile SoC technology has been demonstrated. By recess-gated process, the transistor is operated as a normally-off device which has advantages for less power loss, and easy circuit design. After the GaN/AlGaN MOSFET device design, the DC and RF characteristics are extracted and analyzed by TCAD simulation...
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