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Optical amplifiers are demonstrated by direct bonding III–V gain layers to SOI waveguides which include 2-D and 3-D adiabatic tapers. The 3-D tapers have a low loss of 0.1 dB per mode conversion, the lowest demonstrated for coupling between SOI waveguides of this type. The 2-D tapers are used to control interaction with the III–V gain region. An integrated amplifier delivered 14 dB intrachip gain...
The nonlinearity of a SOI ring resonator was measured using a two-tone method. At frequencies near 10 MHz, 1.5 mW causes significant signal degradation. At frequencies near 1 GHz, little signal degradation is seen.
Two 20-channel second-order optical filter banks have been fabricated. With tuning, the requirements for a wavelength multiplexed photonic AD-converter (insertion loss 1–3 dB, extinction >30 dB and optical bandwidth 22–27 GHz) are met.
We present a comprehensive study of silicon Mach-Zehnder modulators based on carrier injection. Detailed comparisons between simulation results and measurements are made and excellent agreement is obtained for DC and AC characteristics.
A high-speed silicon optical modulator has been demonstrated which can operate either in forward bias using carrier injection, or in reverse bias using carrier depletion. In forward bias, the device requires less than 10 mW of drive power, but has a low bandwidth of 100 MHz. In reverse bias, the device has a nearly flat response to 18 GHz, but requires 700 mW for large modulation depths.
Submicrometer silicon photodiode waveguides, fabricated on silicon-on-insulator substrates, have photoresponse from <1270 to 1740 nm (0.8 AW-1 at 1550 nm) and a 3-dB bandwidth of 10 to 20 GHz. The p-i-n photodiode waveguide consists of an intrinsic waveguide 500times250 nm where the optical mode is confined and two thin, 50-nm-thick, doped Si wings that extend 5 mum out from either side of the...
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