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Extensive modeling and experiments demonstrate a dramatic reduction in parasitic absorption with strain due to a previously overlooked mechanism. A special resonance at 4–5% uniaxial strain indicates that this is the optimal strain level for a room temperature Ge laser.
Using an inverse design method that explores the full design space of fabricable devices, we demonstrate a compact wavelength splitter with low insertion loss (2–4 dB), high contrast (12–17 dB), and a footprint of only 2.8 × 2.8 μm.
A dramatic and previously overlooked interaction of parasitic absorption with strain in germanium (Ge) is demonstrated through extensive simulations and experiments. Uniaxial strain of 4–5% and biaxial strain greater than 1% are the best candidates for a room temperature Ge laser.
Using an inverse design method that explores the full design space of fabricable devices, we demonstrate a compact wavelength splitter with a footprint of only 2.8 × 2.8 m. The device has low insertion loss (2 – 4 dB), high contrast (12 – 17 dB), and is robust to fabrication imperfections.
We propose a novel low threshold, CMOS-compatible laser structure with a strained germanium gain medium and a photonic crystal cavity. We demonstrate 1.70% uniaxial tensile strain through experiments and design a high quality factor (>11,000) optical cavity around the gain medium.
We have developed a general inverse design algorithm for designing micro- and nano-photonic devices, where the user only specifies the desired device performance. We experimentally demonstrate a vertical-incidence wavelength demultiplexing grating designed by this algorithm.
We present a novel structure that simultaneously achieves high tensile strain, pseudo-heterostructure, and high-Q optical cavity in a pure Ge layer. Employing our structure in a GeSn layer will enable a truly practical Si-compatible laser.
We demonstrate second harmonic generation in photonic crystal cavities in (001)- and (111)-oriented GaAs, with fundamental resonance at 1800nm, leading to second harmonic below the GaAs bandgap. Below bandgap operation minimizes linear and nonlinear absorption.
We present a new platform for mimicking heterostructure behavior within nanowires of a single material by using non-uniform strain. These pseudo-heterostructures have lithographically customizable band profiles and show effective carrier confinement at room temperature.
We report uniaxial tensile strains up to 5.0% in lithographically patterned germanium nanowires, which is enough strain to make germanium a direct bandgap semiconductor. Theoretically, this strain can reduce a germanium laser's threshold by >16,000x.
We report recent advances in electrically controlled photonic crystal nanocavity light sources and modulators, including an electrically pumped laser with 181nA threshold, an ultrafast single-mode LED with sub-fJ/bit operation energy, and modulator with 0.2 fJ/bit modulation energy. Additionally, we model the electrical and thermal performance of the lateral p-i-n geometry utilized in these devices,...
We have demonstrated electrically driven photonic crystal nanocavity lasers, LEDs and modulators with record low operation powers (e.g., lasing threshold of 180nA and sub-fJ/bit modulator operation), and with the modulation speeds exceeding 10GHz.
Interest in photonic crystal nanocavities is fueled by advances in device performance, particularly in the development of low-threshold laser sources. Effective electrical control of high-performance photonic crystal lasers has thus far remained elusive due to the complexities associated with current injection into cavities. A fabrication procedure for electrically pumping photonic crystal membrane...
We have demonstrated an electrically driven photonic crystal nanocavity laser with record low threshold (180nA) and a single mode photonic crystal nanocavity LED directly modulated at 10GHz speed with 0.25 fJ/bit energy consumption.
We demonstrate an electrically driven single mode photonic crystal cavity LED with record speed of operation (10 GHz) and 0.25 fJ/bit energy consumption, the lowest of any optical transmitter to date.
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