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Two fully integrated low noise amplifiers using gm-boosting technique for ultra-low voltage and ultra-low-power GPS applications are designed and simulated in a standard 0.18µm CMOS technology. By employing the folded cascode and forward body bias technique, the proposed LNAs can operate at reduced supply voltage and power consumption. The proposed LNA delivers a power gain (S21) of 17.6 dB with a...
An ultra-low-voltage ultra-low-power operational transconductance amplifier (OTA) using dynamic threshold MOS (DTMOS) technique is presented in this paper. The proposed topology is based on a bulk and gate driven input differential pair employs a gain-stage in the Miller capacitor feedback path to improve the pole-splitting effect. The circuit is designed in the 0.18µm CMOS technology. The simulation...
A fully integrated low noise amplifier suitable for ultra-low voltage and ultra-low-power UWB applications is designed and simulated in a standard 0.18µm CMOS technology. Using the common gate, current reuse topology and forward body biasing technique, the proposed UWB LNA works at a very low supply voltage and low power consumption. The flat gain diagram of the LNA are achieved by the series inductors...
Design and simulated results of a fully integrated 5GHz CMOS LNAs are presented. To design these LNAs, the parasitic input resistance of a MOSFET is converted to 50Ω by a simple L-C network, hence eliminating the need for source degeneration. As it is analytically shown, this is because the former methods enhance the gain of the LNA by a factor that is inversely proportional to MOSFET's input resistance...
A new fully differential ultra low-voltage, ultra low-power down-converter mixer for ultra wideband application is presented in this paper. This mixer is designed using four-terminal MOS transistors. The radio frequency is applied to source and local-oscillator signal is applied to the gate with body of devices simultaneously. A DTMOS common source amplifier is employed increasing conversion gain...
This paper presents a highly-linear high-gain low noise amplifier (LNA) based on the inter stage technique. The linearized LNA is achieved by using the linear cascode amplifier as output stage utilizing a modified derivative superposition method and functionality is analyzed using Volterra series. Using simulations in 0.18μm CMOS technology, the IIP3 is improved by more than 37dBm reaching to +3dBm,...
A low voltage, low power dual band Low Noise Amplifier (LNA) is presented in this paper. By employing a forward body bias of the MOSFET and current reuse topology the LNA can be operated at reduced supply voltage and power consumption while maintaining high gain due to its topology. Using 0.18 um CMOS process the LNA is designed at 2.4 GHz and 5.2GHz with 13.1 dB and 14.2 dB voltage gains and 2.9dB...
A fully integrated low noise amplifier suitable for ultra-low voltage and ultra-low-power GPS applications is designed and simulated in a standard 0.18μm CMOS technology. By employing the folded cascode and forward body bias technique, the proposed LNA can operate at a reduced supply voltage and power consumption. The proposed LNA delivers a power gain (S21) of 17.6 dB with a noise figure of 3 dB,...
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