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A reliability study under DC stress has been conducted on a low noise amplifier (LNA), a mixer and a voltage controlled oscillator (VCO). Both mmW blocks were designed with heterojunction bipolar transistor (HBT) 0.13µm SiGe process from STMicroelectronics. Regarding simulations and HBT degradation studies, DC stresses were defined to provide HBT degradation within the mmW blocks. S parameters were...
In order to take up the challenge of BAW-based time reference, this paper presents new BAW/Integrated Circuits (IC) co-integration considerations. For the demonstration, a SiP approach is proposed where the Solidly Mounted Resonator (SMR) has been directly flip-chipped on the top of the IC. This 2.5 GHz oscillator reaches a -93 dBc/Hz phase noise at a 2 kHz carrier offset for a 7.3 mW power consumption...
This paper deals with a tunable bandpass Bulk Acoustic Waves (BAW) filter architecture that uses integrated negative capacitors. In previous papers, the filter architecture was realized with inductances. The drawbacks of this solution were the generation of a second parasitic shunt resonant frequency and then the low-Q factor of the inductance that finally degrades the high-Q factor of BAW resonators...
A master/slave technique which allows to digitally tune the center frequency of BAW RF band-pass filters is proposed to correct the process dispersions and temperature drifts affecting BAW resonators. The proposed scheme relies on detecting the error between the targeted frequency and the actual one by using an envelope detection technique and can be applied to all types of lattice filters. A successive...
An RF oscillator consisting of a BAW resonator on top of a SiGe BiCMOS IC is presented. The circuit achieves a phase noise of -124dBc/Hz at 100kHz carrier offset, -160dBc/Hz floor and supply pushing of 65ppm/V while consuming 12mW in an IC footprint of 0.043mm2.
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