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In this work, we comprehensively explore hot carrier degradation (HCD) in multiple-fin SOI FinFETs with both short channel length and long channel length, and demonstrate that the degradation mechanism in short channel device is different from that of long channel device. The hot carrier degradation in short channel length device under long stress time is dominated by oxide charge. Meanwhile, the...
A study of two major types of LDMOS-SCR electrostatic discharge protection devices for 60V SOI BCD technology is presented. The difference of the P-anode implant positions influences the triggering mechanism of the two types of devices. The relationship between I-V behavior under ESD and the device parameter is studied. Heat dissipation capability of the device is also presented.
A novel LDMOS-SCR device for electrostatic discharge protection of power device is presented. The device is able to be fabricated in SOI 40V LDMOS process without any extra mask. Due to the new structure, a proper and controllable triggering voltage and fine heat dissipation capability are achieved.
A generic carrier-based core model for undoped four-terminal double-gate (DG) MOSFET valid for symmetric, asymmetric, SOI, and independent gate operation modes is presented in this paper. Based on the exact solution of the 1-D Poisson's equation of a general DG-MOSFET configure, a generic drain current model is derived from Pao-Sah's double integral in terms of the carrier concentration. The model...
This paper presents a surface-potential-based non-charge-sheet core model for long-channel fully depleted SOI MOSFET. The formulation starts from a physics-based solution of the surface potential and an analytical non-charge-sheet drain current is provided to describe the fully-depleted SOI MOSFET behavior with the coupling between the front and back interfaces. The model calculation is compared with...
This paper presents a carrier-based analytic model for ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs. It is based on the exact solution of the Poisson-Boltzmann equation by a carrier approach and the current continuity equation with the back interface oxide layer effect. The mode is valid for all the operation regions (linear, saturation, sub-threshold) and traces the transition between them...
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