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A low-power 2-Mb Resistance random access memory (ReRAM) macro is developed in a 90-nm CMOS platform with a 3-nm-thick TaOx/Ta2O5 switching layer of the active area of $0.01~\mu \text{m}^{2}$ . Instability of the ON-state minority bits degrades the high-temperature retention lifetime. The oxygen vacancies in the filament are annihilated by oxygen ions, which have been generated mainly by the OFF-write...
A novel BEOL transistor (BETr) is developed in Cu interconnects with wide band-gap InGaZnO (IGZO) film for on-chip high voltage I/Os in standard CMOS LSIs only by one additional mask. Underlying Cu interconnect and SiN barrier-dielectric on the Cu are utilized as the gate stack in a unique reverse-type thin-film-transistor (TFT) structure. Thickness control of both the IGZO channel and gate SiN is...
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