The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This work experimentally demonstrates negative capacitance MOSFETs in hysteretic and non-hysteretic modes of operation. A PZT capacitor is externally connected to the gate of commercial nMOSFETs fabricated in 28nm CMOS technology to explore the negative capacitance effect. In hysteretic devices, subthreshold slope as steep as 10mV/dec is achieved in the region where the ferroelectric represents an...
We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous FETs by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 layer. Pre-patterned electrodes offer the possibility of reducing the exposure time of exfoliated flakes to oxidant agents with respect to top-contacted devices and maximize the accessible area for sensing applications...
This paper reports a 80nm air gap double-ended tuning fork (DETF) resonator partially filled with 20nm of HfO2. The device operates at 10.7 MHz with a quality Q-factor of 7930 and a motional resistance, Rm, x18 better than for the measured counterparts in air-gaps. An enhancement of the S21 transmission signal of 6dB in addition to the reduction of the Rm have been achieved thanks to the improvement...
This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of Ion, gm, and overdrive are analyzed and explained by most effective reduction of body factor, m < 1, especially for Vg>Vt, which greatly amplify the control on the surface...
In the 21st century electronics, while we continue to approach the physical limits of MOSFET dimension scaling in the sub-10nm region, other new important drivers for digital computing and Internet of Things, have appeared on the research agenda. Among these, one is the energy efficiency of digital computing, from device to system level, which has direct impact on the power consumption (i.e. the energy...
We report the design, fabrication and measurement of a dual-band polarization-independent terahertz reflectarray surface integrated on a silicon reflective substrate. The proposed device opens an important avenue for the integration of tunable elements in terahertz reflectarrays.
We demonstrate and review the unique fine-pitch high-aspect ratio tungsten-filled through-silicon vias (W-TSVs) technology developed by Fraunhofer EMFT in high-resitivity silicon substrates. The proposed process flow is fully compatible with both CMOS and MEMS technology, allowing 3D heterogeneous integration of highperformance, low power, compact tunable RF front-ends. We have assessed the figures...
We propose and characterize graphene quantum capacitors, tunable with voltage by the control of their charge density, for tunable LC tanks as essential building blocks for Radio-Frequency (RF) functions in densely integrated circuits. We fabricate and investigate their performance in RF, and we demonstrate quantum capacitances, Cq, in the range of pF with a tuning range of >1.3∶1 within 1.25 V,...
This work presents one of the first low power pH sensing microfluidic chip based on the heterogeneous integration of: (i) high-k FinFET sensors with liquid gate, (ii) miniaturized Ag/AgCl quasi-Reference Electrode and (iii) passive microfluidic. The integration of these three components provides a fully integrated and compact platform that could be exploited for ionic monitoring in biofluids for healthcare...
We study the impact of quantum mechanical effects on the fin Electron-Hole Bilayer Tunnel FET (EHBTFET) considering different geometries. Through quantum simulations based on the effective mass approximation (EMA), it is found that the fin EHBTFET is affected by the corner effects at the substrate-fin interface, due to reduced electrostatic control that causes a dramatic reduction of the ON current...
The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a field-enhanced design of 2-terminal VO2 switches that allows decreasing their actuation voltage without affecting their performance and reliability...
While RF transistor amplifiers—such as the field effect transistor (FET) amplifier which leverages its transconductance for amplification—are the key enablers of signal amplification in today's wireless communication; their ability to provide amplification degrades with increasing frequencies, thereby requiring multiple amplification stages which makes the device noisy, expensive and bigger in size...
While RF transistor amplifiers—such as the field effect transistor (FET) amplifier which leverages its transconductance for amplification—are the key enablers of signal amplification in today's wireless communication; their ability to provide amplification degrades with increasing frequencies, thereby requiring multiple amplification stages which makes the device noisy, expensive and bigger in size...
We report a thorough investigation of the electrically-induced metal-insulator transition in vanadium dioxide (VO2) for abrupt switching in 2-terminal devices (0.24 mV/dec at 25 °C, 0.38 mV/dec at 50 °C). We exploit the electrothermal actuation model based on Joule heating to model and predict the low temperature dependence of the slope in VO2 switches.
The 2016 IEEE Silicon Nanoelectronics Workshop is a satellite workshop of the 2016 VLSI Symposia sponsored by the IEEE Electron Device Society. It is the twenty-first workshop in the annual series, which showcases original work on nanometer scale devices and technologies that utilize silicon or which are based on silicon substrates.
This work reports a comparison of high-k Al2O3/HfO2/Al2O3 dielectric stack Tunnel FETs with both vertical tunneling and lateral tunneling, as non-volatile memory (NVM) cells. Tunnel FET NVM are fabricated and characterized to evaluate their potential as low power memory operation. These memory cells can be programmed with voltages from −10V to −15V (p type devices) and show extremely stable memory...
This work reports for the first time the demonstration of non-volatile memory (NVM) cells using a Tunnel FETs (TFET) with high-k Al2O3/HfO2/Al2O3 dielectric stack and vertical tunneling. Vertical tunneling TFET devices are fabricated and characterized to evaluate their potential as low power memory operation. The memory cell can be programmed with voltages from −10V to −15V (p type) and show extremely...
We present the experimental demonstration of the first terahertz isolator (working frequency > 1 THz), obtained using the non-reciprocal electromagnetic properties of graphene under magnetostatic bias. The presentation will cover in detail the design, fabrication and measurement of the device. The isolator operated in reflection for circularly polarized waves, showing two bands at 3 and 7.5 terahertz...
In this chapter, we review some of the most recent results in these areas and put them in a unified context that covers a very wide range, from materials to system design. The first section presents a top-down silicon nanowire fabrication platform for high-mobility gate-all-around (GAA) MOSFETs and impact-ionization devices. Ferroelectric FET with sub-100-nm copolymer P(VDF-TrFE) gate dielectric are...
In this book key contributions on developments and challenges in research and education on microelectronics, microsystems and related areas are published. Topics of interest include, but are not limited to: emerging fields in design and technology, new concepts in teaching, multimedia in microelectronics, industrial roadmaps and microelectronic education, curricula, nanoelectronics teaching, long...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.