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Substantial increases in substrate temperature, super-saturation, and V/III ratio have dramatically improved vertical domain propagation during hydride vapour phase epitaxy of orientation-patterned gallium phosphide, leading to device-quality quasi-phasematched layer thicknesses exceeding 400 microns.
Whereas gate-length reduction has served as the major driving force to enhance the performance of GaAs- and InP-based high-electron mobility transistors (HEMTs) over the past three decades, the limitation of this approach begins to emerge. In this paper, we present a systematic evaluation of the impact of greatly reduced source–drain spacing on the performance of 50-nm asymmetrically recessed metamorphic...
Here we report on recent advances in the development of orientation-patterned gallium phosphide (OP-GaP) — a low loss, non-critically phase-matched, 1-μm-pumpable binary analog of ZGP with three times the thermal conductivity for high power applications.
High power frequency doubling of a tunable continuous wave CO2 laser in orientation patterned GaAs is demonstrated. Second harmonic powers of 300 mW at 4.785 μm were obtained from a 4 cm long crystal at incident pump powers of over 30 W.
Frequency doubling of a tunable continuous wave CO2 laser in orientation-patterned GaAs is demonstrated. For 1.8 W incident power at 9.29 μm, 1.9 mW of second harmonic power was obtained from a 4 cm long crystal.
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