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We propose for the first time a systematic evaluation of the performance and underlying trade-off of the use of ternary Hf1−xAlxOy oxides for RRAM application. We show that intermixing HfO2 and Al2O3 deposition cycles in a standard ALD process not only prevents crystallization of active layer but also significantly improve intrinsic retention and disturb-immunity properties at the expense of a small...
We report a novel self-compliant and self-rectifying resistive switching memory cell, with area-scalable switching currents, featuring a set current density of ∼5nA/nm2 (<9uA for a 40nm-size cell), high on-state half-bias nonlinearity of 102 and low reset current density of <0.6nA/nm2 (<1uA@40nm size). The cell can be operated at below ±4V/10ns, with a large on/off window of >102 and retention...
HfO2-based resistive RAM (RRAM) devices have received intensive research attention in the recent years. Most of the HfO2-based RRAM system demonstrates promising performance in bipolar mode. However, HfO2-based RRAM devices in unipolar mode so far, still suffers from low endurance (<;500 cycles), and non-integratable electrode materials such as Pt or Au. In this work, CMOS-compatible Ni-containing...
The integration of La, Gd, and Lu aluminates in a Charge-Trapping Flash (CTF) memory flow as alternative trapping materials is evaluated. It is found that, in order to control the mixing of the aluminates with the tunnel oxide, nitride (for Gd) or nitride + oxide (for La and Lu) buffer layers have to be used. It is also found that during the post-deposition annealing treatments, the nitride buffer...
Rare-Earth aluminates GdAlO and LuAlO are investigated as blocking dielectric for Al2O3 replacement in TANOS flash memory devices. Since the energy bandgap of aluminates strongly depends on their crystallization phase and it is the highest for orthorombic phase, both materials were engineered using templates to assure the highest Eg and k-value after crystallization. As a consequence, the memory stack...
We are reporting for the first time on the use of simple resist-based selective high-k dielectric capping removal processes of La2O3, Dy2O3 and Al2O3 on both HfSiO(N) and SiO2 to fabricate functional HK/MG CMOS ring oscillators with 40% fewer process steps compared to our previous report [1]. Both selective high-k removal (using wet chemistries) and resist strip processes (using NMP and APM) have...
We have investigated Al2O3, Dy2O3, and La2O3 as dielectric cap layers for use in low Vt CMOS integration schemes. The cap layers are found to reduce the Vt by 0.2 V for pFET, and with 0.2 V and 0.5 V for nFET, respectively. Subsequently, we report on the benefits of performing the nitridation (by means of DPN) after cap deposition, instead of before. This allows better control of the nitrogen profile...
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