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A study of the effects of P+ poly gate microstructure and gate oxide cycle on boron penetration from gate electrode through thin oxide is reported. The boron diffusion and the trap generation in the oxide can be significantly reduced by using an as-deposited amorphous Si gate and an oxide cycle which incorporates less Cl into the film. A strong interaction between fluorine and boron results in boron...
The process architecture and device characteristics of a submicrometer CMOS n+/p+ poly gate, Ti-salicide, double-metal technology are described. Tradeoffs among circuit shrinkability, device gain, and hot-carrier-injection susceptibility are discussed. This technology has been successfully implemented in a 0.8-μm unified-design-rule high-performance high-end MPU product
Experiments and simulations have been performed which indicate three important effects of implantation damage on arsenic-phosphorus codiffusion. First, the profiles are primarily determined by the damage-induced injection of defects. Second, damage enhancement is independent of anneal time. Third, the effect of the damage from the phosphorus implant is as important as the arsenic implant damage. It...
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