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This paper analyzes the influence of the electrical coupling among interconnection lines in MEMS gyroscopes and proposes strategies during designing structure to eliminate its effect. Moreover, a compensation circuit is designed to further suppress coupling signal at the readout. The results of bias drift tests under full temperature range indicate that not only the bias drift in the vacuum is much...
In0.53Ga0.47As FinFETs are fabricated on 300 mm Si substrate. High device performance with good uniformity across the wafer are demonstrated (SS=78 mV/dec., Ion/Ioff∼105, DIBL=48 mV/V, gm=1510 µS/µm, and Ion=301 µA/µm at Vds=0.5V with Lg=120 nm device). The extrinsic field effect mobility of 1731 cm2/V-s with EOT∼0.9nm is extracted by split-CV. Devices fabricated on 300mm Si have shown similar performances...
In0.53Ga0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In0.53Ga0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., Ion/Ioff ∼105, DIBL ∼51 mV/V at Vds = 0.5V for Lg=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high...
A high performance 22/20nm CMOS bulk FinFET achieves the best in-class N/P Ion values of 1200/1100 μA/μm for Ioff=100nA/μm at 1V. Excellent device electrostatic control is demonstrated for gate length (Lgate) down to 20nm. Dual-Epitaxy and multiple stressors are essential to boost the device performance. Dual workfunction (WF) with an advanced High-K/Metal gate (HK/MG) stack is deployed in an integration-friendly...
An acceleration latching switch with integrated normally Open/Close paths is presented in this paper. Two arch trusses used as fracture parts of the normally-close path are connected in series to form the normally close path, which will be broken and latched by the latching mechanism to reach the open state once the input acceleration beyond threshold. Moreover, the normally-open path is consisted...
In this paper, a bulk micro machined lateral-axis TFG (tuning fork gyroscope) with improved architecture and combined mechanism sensing capacitors is reported. The combined sensing capacitors make the TFG have high sensitivity and good linearity even under wide input range and fabrication imperfection. Moreover, the decoupled comb drive, together with the improved architecture, can efficiently decouple...
This paper describes the design of a digital closed drive loop for a MEMS vibratory, vacuum packaged gyroscope. The displacement of the gyroscope is demodulated by the adaptive filter-least mean square (LMS) though which the amplitude and phase of the displacement are separated for respective control. The amplitude is kept constant by the automatic gain control (AGC) method with a proportion-integral...
The electrostatic negative-stiffness behavior of vertical structures under out-of-plane motion decreases the resonant frequency and deteriorates the linearity of a lateral-axis tuning-fork gyroscope (TFG). An electrostatically isolated silicon island is proposed to suppress this behavior. The negative-stiffness behavior is observed and the effectiveness of the electrostatic isolation is experimentally...
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