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We calculate valence band structures and transport property of HfO2 gate dielectric surrounded Ge (110) nanowire with a radial force at the boundary of the insulator. The radial force pushes the valence subbands downwards. Most of hole effective masses of top five subbands decrease and densities of states' peaks move down as the force increases. The hole mobility in Ge (110) NW significantly increases...
The strain distribution and strained valence band structure in silicon nanowire with varied thicknesses and deposition temperatures of gate dielectric are discussed in detail in this work. Our calculation indicates that valence subbands are dependent on the structure and process parameters. Strain has little effects in (001) orientation. But in Si (110) nanowire, the valence subbands shift upper and...
For the radial boundary force induced in the process, the strain energy distribution and strain tensor components in Ge (110) nanowire (NW) are calculated by finite element method. Based on the strain distribution, we compute valence band structures with different radial forces. As increasing force values, top valence subbands shift downwards. The influence on the corresponding effective masses and...
We evaluate the performance of GaAs-GaP core-shell (C-S)-nanowire (NW) field-effect transistors by employing a semiclassical ballistic transport model. The valence-band structures of GaAs-GaP C-S NWs are calculated by using a kldrp method including the strain effect. The calculations show that the strain causes substantial band warping and pushes valence subbands to move up. We demonstrate that the...
We evaluate the performance of GaAs-GaP core-shell nanowire field effect transistors by employing a semiclassical ballistic transport model and a k??p calculation of the valence band structures including the strain effect. We find that the strain will induce substantial modulation on the nanowire valence band structures and this modulation will push more conduction channels into the bias window as...
We report on a theoretical study of the valence band structures of germanium-silicon core-shell nanowires based on a 6times6 kldrp model. We take into account the inhomogeneous strain effects induced by the lattice mismatches between germanium and silicon. We find that the top subband ends drift back to Gamma point, and the effective masses of more subbands begin to decrease when the shell thickness...
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