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We evaluate the performance of GaAs-GaP core-shell (C-S)-nanowire (NW) field-effect transistors by employing a semiclassical ballistic transport model. The valence-band structures of GaAs-GaP C-S NWs are calculated by using a kldrp method including the strain effect. The calculations show that the strain causes substantial band warping and pushes valence subbands to move up. We demonstrate that the...
We evaluate the performance of GaAs-GaP core-shell nanowire field effect transistors by employing a semiclassical ballistic transport model and a k??p calculation of the valence band structures including the strain effect. We find that the strain will induce substantial modulation on the nanowire valence band structures and this modulation will push more conduction channels into the bias window as...
In this paper, we proposed a self-consistent simulator based on Monte Carlo method for performance simulation of SpinFET. In SpinFET, the dominant spin dephasing mechanism is the so called DP(Dpsilayakonov-Perelpsila) mechanism, including Dresselhaus effect and Rashba effect. These effects are closely related to the 2-dimensional electron gas (2DEG) in the channel, especially to its envelop function...
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