The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper investigates the device behaviours of a pseudo tri-gate ultra-thin-channel vertical MOSFET with source/drain tie. For comparison two transistors are designed. According to the 2D simulation, our proposed structure can effectively enhance the drain current and the thermal stability, mainly due to the ultrathin channel (Tsi = 10 nm). The fabricated device have very low subthreshold swing...
This paper aims to comprehensively examine the electrical characteristics of a new silicon-on-insulator (SOI) device structure with source/drain (S/D) tie as a function of the block oxide height. According to the 2-D simulations, the height of the block oxide enclosing the silicon body is one of the key parameters for determining the device properties and their fluctuations. Additionally, the self-heating...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.