The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this study, the effects of nitride trap layer properties on location of charge centroid in charge-trap flash (CTF) memory are closely investigated. In the operations of CTF memories, charges tunnel into the nitride layer through thin oxide, unlike the floating-gate (FG) type flash memory where the charges are stored in the conductive poly-crystalline Si. Deeper understanding of distribution of...
The AC-gm dispersions are measured to analyze trap profiles in a cell of 3-D NAND flash cell string before and after P/E cycling. After 4k P/E cycling, the trap density (Nt) near the interface between the poly-Si channel and the tunneling oxide is increased according to the extracted Nt profile. The temperature dependency of the AC-gm dispersion is also investigated.
We characterized the behavior of transient bit-line current (IBL) during reading after giving a pre-bias (Vpre) to two different cells in 3-D stacked NAND flash memory having poly-Si body. Depending on the dominance of charge trapping in blocking dielectric or the interface between the tunneling oxide and the poly-Si body, opposite behavior was observed. To identify the cause, we systematically analyzed...
Trap density (Dit) was extracted for the first time in 3-D stacked NAND flash memory with the tube-type poly-Si channel structure. We verified extracted Dit with conductance method and charge pumping method in 32 nm floating gate (FG) NAND flash memory device. In 3-D stacked NAND flash memory device, the Dit extracted by conductance method was 1∼2×1012 cm−2eV−1 in Ec-ET of 0.15∼0.35 eV. The simulation...
In this study, we comparatively analyze the trap-based memory operation characteristics with tunnel dielectric in Oxide-Nitride-Oxide (ONO) structure. Detailed analysis is focused on the difference between single and bandgap engineered (BE) tunnel dielectric by comparing the program/erase (P/E) and charge retention behaviors. As a result, bandgap engineered tunnel dielectric structure embodies both...
With the device dimension scaling down, thickness-dependent property optimization for Oxide-Nitride-Oxide (ONO) used in SONOS flash memory is an important issue for the compatibility with scaled CMOS technology. With regard to the thickness-dependent property, trap-based erase behaviors should be investigated thoroughly because electron back-tunneling from gate make erase operation difficult. This...
We comparatively analyze the erase speed and long-term reliability between the conventional SONOS flash memory and the bandgap engineered SONOS flash memory devices. As a result, the bandgap engineered SONOS device is indeed proven to provide faster erase speed and better long-term data retention characteristics than the conventional SONOS device.
In this paper, the authors developed the P/E model of NAND-type nitride-based charge trapping flash memories with transient ONO field, tunneling currents, trapped charge density and threshold voltage shift. The simulated results show acceptable V?? shift operation of SONOS NAND flash memory using FN and direct tunneling in P/E process. This modeling works account for the V?? shift as a function of...
Recently, several reports have been published on RTS noise which brings about large Vu, fluctuation in floating gate flash memory. However, they have primarily looked at the RTS distribution of the main array without providing a detailed description of the physical mechanism and have not discussed the location and energy of traps. In this paper, we accurately extracted the location (vertical and lateral...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.