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Read current fluctuation (ΔIread) due to random telegraph noise was measured from a cell in a NAND flash memory cell string, and its effect on threshold voltage fluctuation (ΔVth) was analyzed. Sixteen-level fluctuation (four traps) was observed in a 60-nm cell of a cell string (ΔIread/Iread of ~0.4). ΔIread increased with decreasing Lg, and ΔIread/Iread up to 0.75 was observed at 48 nm. ΔIread, ΔV...
Recently, several reports have been published on RTS noise which brings about large Vu, fluctuation in floating gate flash memory. However, they have primarily looked at the RTS distribution of the main array without providing a detailed description of the physical mechanism and have not discussed the location and energy of traps. In this paper, we accurately extracted the location (vertical and lateral...
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