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In 3D stacked NAND flash memory, the number of stacked layers tends to increase for high density storage capacity. With the increase of the height of devices, it is important to achieve a good vertical etch profile by which word line (WL) gate dimensions are affected. In this paper, we investigate the effect of the variation of gate dimensions on the program characteristics in 3D NAND flash memory...
Various critical issues related with 3-D stacked nand Flash memory are examined in this paper. Our single-crystalline STacked ARray (STAR) has many advantages such as better scalability, possibility of single-crystal channel, less sensitivity to 3-D interference, stable virtual source/drain characteristic, and more extendability over other stacked structures. With STAR, we proposed a unit 3-D structure,...
Recently, various kinds of novel flash memory devices have been incessantly developed. Especially, a number of devices in vertical structures have been proposed for higher integration. In many cases, the silicon channels are constructed in a vertical manner so that the memory cells share a common channel. For the sake of higher integration density, thickness of silicon channel should be essentially...
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