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Characteristics of flicker (or ) noise have been investigated in resistive-switching random access memory (RRAM) devices with double-layered (DL) metal oxide structure. In DL-RRAMs, no significant difference is found in the normalized current noise power spectral densities of the high- and low-resistance states, unlike RRAMs with the ...
In this paper, bipolar resistive switching was investigated in our fabricated Ti/Si3N4/p+-Si resistive random access memory (RRAM) devices. Heavily doped p-type Si was used instead of a conventional bottom electrode (BE) using metal such as Pt. We found that forming-free process, self-compliance and gradual reset were shown in this device. The operation voltage was with 1.8∼3.5 V during set process...
Novel resistive random access memory (RRAM) cell structure without an access transistor or diode is proposed and fabricated. The cell structure is comprised of both a phase change material (GeSbTe) and a bipolar resistive switching material (TiO2). The electrical properties of the proposed cell are also evaluated in order to verify the possibility of operation without an access transistor or diode...
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