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In 3D stacked NAND flash memory, the number of stacked layers tends to increase for high density storage capacity. With the increase of the height of devices, it is important to achieve a good vertical etch profile by which word line (WL) gate dimensions are affected. In this paper, we investigate the effect of the variation of gate dimensions on the program characteristics in 3D NAND flash memory...
We have proposed cone SONOS memory structure previously. The point of the structure is field concentration effect in two directions. Among the two, concentration of source to drain direction is critical in program operation. Simulation result shows the shape of narrow drain leads to great memory performance. Fabricated structure shows the same results. In this report, simplified program simulation...
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