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Tail bits in the RESET process influence the distribution of resistive parameters, and will dramatically decrease the uniformity in high electric stimuli region. In this study, such phenomena can be explained as non-uniform distribution of defects in the insulating layer and high defects density in the bottleneck region of conductive filament (CF). Then departing from defects' distribution function,...
We investigated the endurance characteristics of a Cu-doped HfO2 selector device in one transistor-one selector (1T1S) structure, which is fully compatible with standard BEOL process. The device exhibits high endurance of 1010 under 10 μΑ compliance current. However, reduced endurance (105) was observed as increasing the compliance up to 100 μΑ. Under the condition of high operation, intrinsic defect...
In this summary, the resistive random access memory (RRAM) with the structure of Pt/HfO2/Ti is investigated for applications in radiation circumstance. The heavy ion 86Kr26+ of HIRFL (The Heavy Ion Research Facility in Lanzhou) is used as the radiation source. The energy of 86Kr26+ is 25 MeV/u, the LET is 37.6 MeV/(cm2/mg), and the fluence of 5e11 is achieved after 2 hours radiation. Basic performance...
We proposed a new statistical evaluation method to justify the microstructure evolution process of conductive filament (CF) in the reset operation of resistive switching memory (RRAM) according to the dependence of the Weibull slope of reset parameters on the CF size. We demonstrated that in Cu/HfO2/Pt device the CF can be controlled to be ruptured abruptly, which is more advantageous to the reliable...
Multi-level per cell (MLC) is a prime approach to realize high-density storage for resistive random access memory (RRAM). In this work, we investigated the data retention and random telegraph noise (RTN) characteristics on intermediate resistance states (IRS) which were programmed in Set and Reset process for the first time. The main observations are as follows: 1. Although the IRS-SET have higher...
The variation of switching parameters in RRAM is impacted by the resistance states through a statistical analysis. We proposed some improved program/erase (P/E) methods to precisely control the fluctuation of the resistance states. In DC P/E operation, combing current-sweep-induced gradual SET and voltage-sweep-induced gradual RESET, uniform resistance states can be achieved. In pulse P/E operation,...
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