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A novel SOI LDMOS (Lateral Double Diffused MOSfet) structure substituting the PN junction between channel region and drift region with PIN junction is presented in this paper. On-state and off-state characteristics of this device are investigated by two dimensional simulation using Dessis. This novel device has higher breakdown voltage with the same drift length compared to conventional device. The...
This paper presents on-state characteristics of two types of UTB FD MOSFETs simulated by Monte Carlo method. The two devices under investigation have elevated and recessed source/drain respectively. The comparison of non-stationary transports effect is made between the two devices. Different non-stationary transports effect in the two devices is the cause of different on state characteristics. Transit...
Statistical 3D TCAD simulations of 20nm gate SOTB MOSFETs have been done to study the effects of TBox, Vback-gate and WF on LER-induced variability. Our results show that thin box, reverse back-gate bias and high WF are effective ways to control the LER-induced threshold voltage's variations, especially for n-SOTB MOSFETs.
In this paper, we analyze the gate-induced image force barrier lowering in a 45-nm-gate-length ultra-thin-body silicon-on-insulator structure by using 2D full-band self-consistent ensemble Monte Carlo simulation with both tunneling current and thermal emission current. Results show that gate-induced barrier lowering has a very significant influence on the drive current. The influence of gate voltage,...
In this paper, strain induced Si MOSFETs with multiple contact positioning strategies are simulated by ISE TCAD tool. The strain distribution of the MOSFETs with symmetric and asymmetric drain/source structure is investigated. The performance of the devices such as the Idsat and transfer characteristics is also simulated and compared. The results will help to model the characteristics of MOSFETs considering...
The copper interconnect comes into nanometers with the scaling down of device dimension. At the same time, the resistivity is increasing and the characteristic gets worse. In our paper, an optimal aspect ratio (AR) for Cu-line is found by Monte-Carlo (MC) method so that we can get the optimized electric conductivity and improve the performance of interconnection.
In this paper, a novel method based on hybrid genetic algorithm (GA) was developed to extract parameters of analytical or part-analytical models. It needn't complex computation compared with conventional methods or other compound genetic algorithm. With a simple input file and opening model codes, it was easy to be modified for other models. Using this method, parameters of BSIMPD MOSFET threshold...
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