Search results for: Lang Zeng

Items from 1 to 20 out of 49 results

article

Stability and feedback control for a coupled hematopoiesis nonlinear system

Zhen Jia, Huazhou Chen, Lilan Tu, Lang Zeng

Advances in Difference Equations > 2018 > 2018 > 1 > 1-12

In this paper, we investigate the dynamics of a nonlinear differential system, a mathematical model of the coupled hematopoiesis network. The asymptotic stability of a unique positive periodic solution of the system under certain conditions is proved theoretically. Furthermore, we propose a linear feedback control scheme to guarantee the asymptotic stability of the system when the above conditions...

article

Spin wave propagation in perpendicularly magnetized nm-thick yttrium iron garnet films

Jilei Chen, Florian Heimbach, Tao Liu, Haiming Yu, more

Journal of Magnetism and Magnetic Materials > 2018 > 450 > C > 3-6

Magnonics offers a new way for information transport that uses spin waves (SWs) and is free of charge currents. Unlike Damon-Eshbach SWs, the magneto-static forward volume SWs offer the reciprocity configuration suitable for SW logic devices with low power consumption. Here, we study forward volume SW propagation in yttrium iron garnet (YIG) thin films with an ultra-low damping constant α=8×10-5....

article

Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect

Lang Zeng, Tianqi Gao, Deming Zhang, Shouzhong Peng, more

IEEE Transactions on Electron Devices > 2017 > 64 > 12 > 4919 - 4927

The high current density required by magnetic tunneling junction (MTJ) switching driven by the spin transfer torque (STT) effect leads to large power consumption and severe reliability issues, hindering the timetable for STT magnetic random access memory to mass market. By utilizing the voltage-controlled magnetic anisotropy (VCMA) effect, the MTJ can be switched by the voltage effect and is postulated...

article

Reliability-Enhanced Hybrid CMOS/MTJ Logic Circuit Architecture

Deming Zhang, Lang Zeng, Youguang Zhang, Jacques Olivier Klein, more

IEEE Transactions on Magnetics > 2017 > 53 > 11 > 1 - 5

Benefitting from its non-volatility, nearly infinite endurance, good scalability, and great CMOS compatibility, magnetic tunnel junction (MTJ) embedded in conventional CMOS logic circuits has been proposed as one potentially powerful solution to introduce non-volatility in today’s programmable logic circuits, which is envisioned to achieve low power and high area efficiency. However, the recently...

chapter

High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect

Tianqi Gao, Lang Zeng, Deming Zhang, Xiaowan Qin, more

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) > 305 - 308

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

In this paper, we propose an all spin logic device with voltage controlled magnetic anisotropy (VCMA-ASL) and employ negative capacitance (NC) effect as a novel approach to amplify the VCMA effect. A new working strategy of 3-step operation scheme has been proposed, which reduces the energy consumption effectively as well as accelerates switching process.

article

Reliability-Enhanced Separated Pre-Charge Sensing Amplifier for Hybrid CMOS/MTJ Logic Circuits

Deming Zhang, Lang Zeng, Tianqi Gao, Fanghui Gong, more

IEEE Transactions on Magnetics > 2017 > 53 > 9 > 1 - 5

Benefitting from its non-volatility, low power, high speed, nearly infinite endurance, good scalability, and great CMOS compatibility, magnetic tunnel junction (MTJ) embedded in conventional CMOS logic circuits has been proposed as one potentially powerful solution to introduce non-volatility in today’s programmable logic circuits, which is envisioned to extend Moore’s law. However, a critical issue...

chapter

Proposal for novel magnetic memory device with spin momentum locking materials

Xiaowan Qin, Lang Zeng, Tianqi Gao, Deming Zhang, more

2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) > 45 - 46

2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)

In this work, novel magnetic memory device is proposed based on fascinating Spin Momentum Locking (SML) materials. The device utilizes direct spin current to charge current conversion and don't need Magnetic Tunneling Junction (MTJ) structure. The NOR, NAND and 3D array structure of the proposed magnetic memory device are demonstrated and discussed.

chapter

Frequency modulation of spin torque nano oscillator with voltage controlled magnetic anisotropy effect

Zuodong Zhang, Lang Zeng, Tianqi Gao, Deming Zhang, more

2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) > 47 - 48

2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)

In this work, a novel Spin Torque Nano Oscillator (STNO) device which can sustain high frequency oscillation without demand of bias magnetic field is proposed. Voltage Controlled Magnetic Anisotropy (VCMA) effect is employed to increase perpendicular anisotropy field leading to high oscillation frequency in the absence of bias magnetic field. In addition, VCMA effect also can be utilized as frequency...

chapter

Compact modeling of high spin transfer torque efficiency double-barrier magnetic tunnel junction

Guanda Wang, Yue Zhang, Zhizhong Zhang, Jiang Nan, more

2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) > 49 - 54

2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)

The considerable power consumption on logic and memory circuit system will be an unavoidable bottleneck with the shrinking of complementary metal oxide semiconductor (CMOS) technology size. One promising solution is to build non-volatile spintronic device, e.g. spin transfer torque magnetic random access memory (STT-MRAM). The basic storage unit of STT-MRAM, i.e. magnetic tunnel junction (MTJ), has...

article

Performance Evaluation and Optimization of Single Layer MoS₂ Double Gate Transistors With Schottky Barrier Contacts

Lang Zeng, Deming Zhang, Tianqi Gao, Fanghui Gong, more

IEEE Transactions on Electron Devices > 2017 > 64 > 7 > 2999 - 3006

The making use of 2-D material as transistor channel is a rapid growth field since it can provide enough gate controllability for transistors at scaling limit. Among all kinds of 2-D materials, monolayer MoS₂ stands out because of its large intrinsic bandgap and moderate mobility at room temperature. Most of the simulation work assumes the source/drain contacts of monolayer MoS₂ transistors are Ohmic...

chapter

Low power all spin logic device with voltage controlled magnetic anisotropy

Tianqi Gao, Lang Zeng, Deming Zhang, Fanghui Gong, more

2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) > 1 - 4

2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)

In this work, we proposed all spin logic device with voltage controlled magnetic anisotropy (VCMA-ASL). Simulation results by spin circuit method reveal that both switching time and energy consumption can be improved. It is shown that by increasing oxide thickness and VCMA coefficient, ultra-low power ASL device can be achieved.

chapter

Stochastic spintronic device based synapses and spiking neurons for neuromorphic computation

Deming Zhang, Lang Zeng, Youguang Zhang, Weisheng Zhao, more

2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) > 173 - 178

2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)

Spintronics devices such as magnetic tunnel junction (MTJ) have been investigated for the neuromorphic computation. However, there are still a number of challenges for hardware implementation of the bio-inspired computing, for instance how to use the binary MTJ to mimic the analog synapse. In this paper, a compound scheme is firstly proposed, which employs multiple MTJs connected in parallel operating...

article

All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron

Deming Zhang, Lang Zeng, Kaihua Cao, Mengxing Wang, more

IEEE Transactions on Biomedical Circuits and Systems > 2016 > 10 > 4 > 828 - 836

Artificial synaptic devices implemented by emerging post-CMOS non-volatile memory technologies such as Resistive RAM (RRAM) have made great progress recently. However, it is still a big challenge to fabricate stable and controllable multilevel RRAM. Benefitting from the control of electron spin instead of electron charge, spintronic devices, e.g., magnetic tunnel junction (MTJ) as a binary device,...

article

High-Speed, Low-Power, and Error-Free Asynchronous Write Circuit for STT-MRAM and Logic

Deming Zhang, Lang Zeng, Gefei Wang, Yu Zhang, more

IEEE Transactions on Magnetics > 2016 > 52 > 8 > 1 - 4

Benefiting from its simple switching scheme (only a bidirectional current source), high-speed and low-power spin-transfer torque (STT) has been regarded as one of the most promising switching mechanisms for a magnetic tunnel junction (MTJ)-based non-volatile memory and logic circuits. However, it suffers from a number of reliability issues like write error induced by its intrinsic stochasticity, process...

chapter

Performance evaluation and optimization of single layer MoS₂ double gate transistors with metallic contacts

Lang Zeng, Fanghui Gong, Jiang Nan, Yangqi Huang, more

2016 IEEE International Nanoelectronics Conference (INEC) > 1 - 2

2016 IEEE International Nanoelectronics Conference (INEC)

In this work, the performance of single layer MoS2 double gate transistors with metallic contacts is evaluated with quantum ballistic calculation. The image force which is crucial for accurate simulation of Schottky barrier is taken into account. The simulation results reveal that increasing doping concentration is the most effective way to adjust transistor performance, and device performance of...

chapter

Spin wave based synapse and neuron for ultra low power neuromorphic computation system

Lang Zeng, Deming Zhang, Youguang Zhang, Fanghui Gong, more

2016 IEEE International Symposium on Circuits and Systems (ISCAS) > 918 - 921

2016 IEEE International Symposium on Circuits and Systems (ISCAS)

In this work, we have proposed that the neural synapses and neurons can be realized by utilizing spin waves (SWs) as information carrier. The SWs is excited by spin torque nano-oscillator (STNO), and detected with several different physical mechanisms: 1) tunneling magnetic-resistance 2) spin pumping and 3) inverse spin hall effect. The proposed SWs based synapses and neurons can be further combined...

article

Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain

Pengying Chang, Xiaoyan Liu, Lang Zeng, Gang Du

Solid State Electronics > 2015 > 113 > Complete > 68-72

We investigate hole mobility in InSb-based ultrathin body (UTB) devices based on physical modeling. For arbitrary surface orientation, the dependence of hole mobility on body thickness and biaxial strain is evaluated. The anisotropic band structures under quantum confinement are computed by solving the six-band k⋅p Schrödinger and Poisson equations in a self-consistent way. Hole mobility is calculated...

chapter

Realization of neural coding by stochastic switching of magnetic tunnel junction

Deming Zhang, Lang Zeng, Fanghui Gong, Tianqi Gao, more

2015 15th Non-Volatile Memory Technology Symposium (NVMTS) > 1 - 4

2015 15th Non-Volatile Memory Technology Symposium (NVMTS)

In this paper, we present the realization of neural rate coding with probabilistic spike trains by using two back-to-back magnetic tunnel junctions (MTJs) for the bio-inspired computing applications. By exploiting the intrinsic stochastic switching of the MTJ device between two different resistance states, an analog stimulus can be converted into a probabilistic spike train and its spike rate can...

chapter

Accelerated 3D full band self-consistent ensemble Monte Carlo device simulation utilizing intel MIC co-processors on tianhe II

Longxiang Yin, Minquaan Fang, Lang Zeng, Lilun Zhang, more

2015 International Workshop on Computational Electronics (IWCE) > 1 - 4

2015 International Workshop on Computational Electronics (IWCE)

We use Intel Xeon Phi Many Integrated Core (MIC) to accelerate our 3D full band self-consistent ensemble Monte Carlo simulator. We put Quantum Correction part onto MIC and others are still processed on CPU. We compare results between this newly developed MIC+CPU mode and traditional all-on-CPU mode in three different situations. We find that MIC co-processors are suitable for 3D MC simulation with...

chapter

Channel Modeling and Reliability Enhancement Design Techniques for STT-MRAM

Liuyang Zhang, Wang Kang, Youguang Zhang, Yuanqing Cheng, more

2015 IEEE Computer Society Annual Symposium on VLSI > 461 - 466

2015 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)

Spin transfer torque magnetic random access memory (STT-MRAM) has emerged as a potential candidate for the next-generation universal memory technology. However, many challenges still exist that block its commercialization and application. One of the main challenges is the reliability concerns, especially as technology scales down to nanometer nodes. For example, the intrinsic stochastic switching...

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MOSFET (11)
MAGNETIC TUNNELING (10)
SCHOTTKY BARRIERS (9)
SWITCHES (9)
LOGIC GATES (8)
MONTE CARLO METHODS (8)
MOSFETS (8)
SILICON (8)
MAGNETIC TUNNEL JUNCTION (MTJ) (6)
RESISTANCE (6)
CARRIER TRANSPORT (4)
DOPING (4)
INTEGRATED CIRCUIT MODELING (4)
SCATTERING (4)
TRANSISTORS (4)
CMOS INTEGRATED CIRCUITS (3)
COMPOUNDS (3)
CORRELATION (3)
DECISION SUPPORT SYSTEMS (3)
FINFETS (3)
HOLE MOBILITY (3)
INSB (3)
MODELING (3)
MONTE CARLO METHOD (3)
NEURONS (3)
PHONONS (3)
SENSORS (3)
STRAIN (3)
TORQUE (3)
TUNNELING (3)
ACOUSTICS (2)
CAPACITANCE (2)
CHARGE CARRIER PROCESSES (2)
CMOS TECHNOLOGY (2)
DEVICE DESIGN OPTIMIZATION (2)
DISCHARGES (ELECTRIC) (2)
DOPANT-SEGREGATED SCHOTTKY BARRIER MOSFET (2)
DOPANT-SEGREGATED STRUCTURE (2)
DRIVE CURRENT (2)
EDUCATIONAL INSTITUTIONS (2)
ELECTRODES (2)
ERROR ANALYSIS (2)
FETS (2)
FINFET (2)
FREQUENCY MODULATION (2)
IMMUNE SYSTEM (2)
IN<INF>0.7</INF>GA<INF>0.3</INF>AS (2)
INTEGRATED CIRCUIT RELIABILITY (2)
JUNCTIONLESS (JL) (2)
LOGIC CIRCUITS (2)
MAGNETOMECHANICAL EFFECTS (2)
MATHEMATICAL MODEL (2)
MICROELECTRONICS (2)
NEGATIVE CAPACITANCE (2)
NEUROMORPHIC COMPUTATION (2)
NEUROMORPHICS (2)
NON-VOLATILITY (2)
OPTICAL SCATTERING (2)
PERPENDICULAR MAGNETIC ANISOTROPY (2)
SCHOTTKY BARRIER MOSFETS (2)
SCHOTTKY GATE FIELD EFFECT TRANSISTORS (2)
SEMICONDUCTOR DOPING (2)
SEMICONDUCTOR PROCESS MODELING (2)
SENSING RELIABILITY (2)
SILICIDES (2)
SILICON-ON-INSULATOR (2)
SIZE 45 NM (2)
THERMAL RESISTANCE (2)
THREE-DIMENSIONAL DISPLAYS (2)
TUNNELLING (2)
(111) (1)
2D FULL-BAND SELF-CONSISTENT ENSEMBLE MONTE CARLO SIMULATION (1)
3D (1)
AB INITIO CALCULATIONS (1)
ACCELERATION (1)
AGGRESSIVE FLUCTUATION (1)
ALL SPIN ARTIFICIAL NEURAL NETWORK (ASANN) (1)
ALL SPIN LOGIC DEVICE (1)
ALUMINIUM (1)
AMBIPOLAR SCHOTTKY BARRIER (1)
ANALOG-LIKE WEIGHT SPECTRUM (1)
ANALYTICAL MODELS (1)
ANISOTROPIC MAGNETORESISTANCE (1)
ANNEALING (1)
ANTENNA DESIGN (1)
ARMCHAIR MOS<INF>2</INF> NANO-RIBBONS (AMOS<INF>2</INF>NRS) (1)
ARRAYS (1)
ARTIFICIAL NEURAL NETWORKS (1)
ARTIFICIAL SYNAPTIC DEVICE (1)
ASYMPTOTIC STABILITY (1)
BALLISTIC TRANSPORT (1)
BIAXIAL STRAIN (1)
BINARY SYNAPTIC DEVICE (1)
BIO-INSPIRED COMPUTING (1)
BODY THICKNESS (1)
BUILT-IN SENSING CIRCUIT (BSC) (1)
C (1)
CARRIER MOBILITY (1)
CARRIER TRANSPORT MECHANISM (1)
CASCADING STYLE SHEETS (1)
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INFONA - science communication portal

Search results for: Lang Zeng

Stability and feedback control for a coupled hematopoiesis nonlinear system

Spin wave propagation in perpendicularly magnetized nm-thick yttrium iron garnet films

Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect

Reliability-Enhanced Hybrid CMOS/MTJ Logic Circuit Architecture

High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect

Reliability-Enhanced Separated Pre-Charge Sensing Amplifier for Hybrid CMOS/MTJ Logic Circuits

Proposal for novel magnetic memory device with spin momentum locking materials

Frequency modulation of spin torque nano oscillator with voltage controlled magnetic anisotropy effect

Compact modeling of high spin transfer torque efficiency double-barrier magnetic tunnel junction

Performance Evaluation and Optimization of Single Layer MoS₂ Double Gate Transistors With Schottky Barrier Contacts

Low power all spin logic device with voltage controlled magnetic anisotropy

Stochastic spintronic device based synapses and spiking neurons for neuromorphic computation

All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron

High-Speed, Low-Power, and Error-Free Asynchronous Write Circuit for STT-MRAM and Logic

Performance evaluation and optimization of single layer MoS₂ double gate transistors with metallic contacts

Spin wave based synapse and neuron for ultra low power neuromorphic computation system

Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain

Realization of neural coding by stochastic switching of magnetic tunnel junction

Accelerated 3D full band self-consistent ensemble Monte Carlo device simulation utilizing intel MIC co-processors on tianhe II

Channel Modeling and Reliability Enhancement Design Techniques for STT-MRAM

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