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Three bits per cell NAND Flash Memory Technology for 30 nm and beyond has been successfully developed with floating gate technology. Tight natural Vth distribution, wide program/erase window, and good cell reliability such as program disturb, endurance and data retention are obtained. 8 level Vth distributions are successfully demonstrated.
NAND flash memories are used in digital still cameras, cellular phones, MP3 players and various memory cards. As seen in the growing needs for applications such as solid-state drives and video camcoders, the market demands for larger-capacity storage has continuously increased and NAND flash memories are enabling a wide range of new applications. In such situations, to achieve larger capacity at low...
Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm2, with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual VDD scheme enabling efficient use of 1MB blocks
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