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We report on using a single trench unit process for the trench isolation and for the trench power MOSFET of a common-drain smart power IC technology. The trench power MOSFET has a maximum specific on-resistance, (RonldrA), below 50 mOmega-mm2 and a typical breakdown voltage, Vbr, of 95 V. The trench isolation provides well isolation up to 90 V. Using a single trench unit process for both devices results...
For short circuit design protection, quasi-saturation behaviour of vertical power DMOS transistors has to be included in circuit simulator compact models. In this region an unexpected increase in current has been observed, due to the injection of electrons from the n/sup +/ source region into the n-substrate. The purpose of this paper is to analyze this effect and include its results in a compact...
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